Efficient directly emitting high-power Tb:LiLuF laser operating at 587.5 nm in the yellow range.

We present, to the best of our knowledge, the most efficient solid-state laser directly emitting in the yellow spectral range. Without any nonlinear conversion steps, a Tb:LiLuF laser operates at a wavelength of 587.5 nm with an output power of 0.

Performance and wavelength tuning of green emitting terbium lasers.

Wavelength tuning experiments in the green spectral range applying Tb-doped LiLuF and Tb/Na-codoped CaF single crystals are presented. While in the former case almost 100 mW could be obtained throughout a total range of 7 nm, the inhomogeneously broadened emission features of Tb in the CaF-matrix allowed for a continuous tuning range exceeding 10 nm. For initial characterization, free running continuous wave laser experiments using Tb-doped LiLuF, Na:CaF, and stoichiometric TbF crystals were carried out resulting in efficient continuous wave laser operation in the green spectral region.

Spectroscopy and laser operation of Sm(3+)-doped lithium lutetium tetrafluoride (LiLuF(4)) and strontium hexaaluminate (SrAl(12)O(19)).

We report on laser operation in the orange and red spectral range in samarium (Sm(3+))-doped fluoride and oxide crystals at 300 K. Sm(3+)-doped LiLuF(4) (LLF) and SrAl(12)O(19) (SRA) crystals were grown by the Czochralski-technique and utilized for spectroscopic investigations and laser experiments. The spin-forbidden transitions of Sm(3+)exhibit low cross sections the order of 10(-21) cm(2), but high radiative upper state lifetimes of several ms in both crystal systems.

Deep red diode-pumped Pr³⁺:KY₃F₁₀ continuous-wave laser.

We report the first observation of continuous-wave laser emission at 720 nm, in the deep red region, of a Pr3+:KY3F10 (Pr:KYF) single crystal, pumped with a blue InGaN-based laser diode at 446 nm. We employed a hemispherical cavity with three different output coupling mirrors transmitting 0.7%, 1.

SESAM mode-locked red praseodymium laser.

We present the first semiconductor saturable absorber mirror (SESAM) mode-locked praseodymium solid-state laser. The laser is based on a Pr(3+):LiYF(4) crystal as gain medium and a GaInP-quantum well-based SESAM. Self-starting continuous-wave mode-locked laser operation with an average output power of 16 mW is achieved at a center wavelength of 639.

Yellow laser performance of Dy³⁺ in co-doped Dy,Tb:LiLuF₄.

We present laser results obtained from a Dy³⁺-Tb³⁺ co-doped LiLuF₄ crystal, pumped by a blue emitting InGaN laser diode, aiming for generation of a compact 578 nm source. We exploit the yellow Dy³⁺ transition ⁴F(9/2)⇒⁶H(13/2) to generate yellow laser emission. The lifetime of the lower laser level is quenched, via energy transfer, to co-doped Tb³⁺ ions in the fluoride crystal.

High-power red, orange, and green Pr³⁺:LiYF₄ lasers.

Laser experiments with Pr(3+):LiYF4 under excitation with a frequency doubled optically pumped semiconductor laser emitting 5 W at 479 nm were performed at seven different laser wavelengths of 523, 546, 604, 607, 640, 698, and 720 nm. At all these wavelengths the output power exceeded 1 W. The best performance at 523 nm with an output power of 2.

Thin-disk laser operation of Pr³⁺,Mg²⁺:SrAl₁₂O₁₉.

We present first results in applying the thin-disk concept to lasers directly emitting in the visible spectral range. The pump light was provided by 24 InGaN laser diodes emitting 1 W each at 444 nm, which were coupled into a 200 μm fiber. A 300 μm thin Pr3+,Mg2+:SrAl12O19 crystal served as gain medium.

Highly efficient continuous wave blue second-harmonic generation in fs-laser written periodically poled Rb:KTiOPO₄ waveguides.

Waveguides were inscribed into a 9.5 mm long periodically poled KTiOPO4 crystal with a Ti:sapphire femtosecond-laser. Waveguiding was achieved between two parallel written tracks with spacings of 17-19 μm.

Wide wavelength tunability and green laser operation of diode-pumped Pr3+:KY3F10.

We report on wide spectral tunability of a quasi-continuous wave Pr(3+):KY(3)F(10) laser under InGaN laser diode excitation at 445 nm. The total tuning range exceeded 100 nm in the visible spectral range on several intervals between 521 nm and 737 nm. The broadest continuously tunable region of almost 50 nm extended from 688 nm to 737 nm.