Publications by authors named "Phi H Q Pham"

Article Synopsis
  • The study examines how different transfer processes affect the quality, morphology, and electrical properties of monocrystalline graphene by using techniques like optical microscopy, scanning electron microscopy, Raman spectroscopy, and electrical measurements.
  • It highlights that the controlled bubbling electrochemical delamination transfer method is a fast and effective way to transfer large graphene crystals without harming their quality.
  • The research also finds that the oxidation of copper surfaces alters the strain experienced by graphene before transferring it to another substrate, but this strain is minimized after the transfer, resulting in high-quality, homogeneous graphene suitable for devices with low contact resistance.
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We present a comprehensive study of the electrochemical capacitance between a one-dimensional electronic material and an electrolyte. In contrast to a conventional, planar electrode, the nanoscale dimension of the electrode (with diameter smaller than the Debye length and approaching the size of the ions in solution) qualitatively changes the capacitance, which we measure and model herein. Furthermore, the finite density of states in these low dimensional electronic systems results in a quantum capacitance, which is comparable to the electrochemical capacitance.

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The coupling of an electromagnetic plane wave to a thin conductor depends on the sheet conductance of the material: a poor conductor interacts weakly with the incoming light, allowing the majority of the radiation to pass; a good conductor also does not absorb, reflecting the wave almost entirely. For suspended films, the transition from transmitter to reflector occurs when the sheet resistance is approximately the characteristic impedance of free space (Z  = 377 Ω). Near this point, the interaction is maximized, and the conductor absorbs strongly.

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THz frequency-domain transmittance measurements were carried out on chemical-vapor-deposited (CVD) graphene films transferred to high-resistivity silicon substrates, and packaged as back-gated graphene field effect transistors (G-FETs). The graphene AC conductivity σ(ω), both real and imaginary parts, is determined between 0.2 and 1.

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We fabricated large arrays of suspended, single-layer graphene membrane resonators using chemical vapor deposition (CVD) growth followed by patterning and transfer. We measure the resonators using both optical and electrical actuation and detection techniques. We find that the resonators can be modeled as flat membranes under tension, and that clamping the membranes on all sides improves agreement with our model and reduces the variation in frequency between identical resonators.

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