Publications by authors named "Pham Duy Phong"

In practical applications of passive sonar principles for extracting characteristic frequencies of acoustic signals, scientists typically employ traditional time-frequency domain transformation methods such as Mel-frequency, Short time Fourier transform (STFT), and Wavelet transform (WT). However, these solutions still face limitations in resolution and information loss when transforming data collected over extended periods. In this paper, we present a study using a two-stage approach that combines pre-processing by Cubic-splines interpolation (CSI) with a probability distribution in the hidden space with Siamese triple loss network model for classifying marine mammal (MM) communication signals.

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Recently, silver nanoparticles (AgNPs) have been extensively explored in a variety of biological applications, especially cancer treatment. AgNPs have been demonstrated to exhibit anti-tumor effects through cell apoptosis. This study intends to promote cell apoptosis further by increasing oxidative stress.

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Crevice corrosion accounts for 62% of the recorded breakdown of insulators utilized in transmission lines, which may interfere with the reliability of power utilities. To address these challenges, sustainable and resilient slippery lubricant-infused porous surfaces (SLIPS) are developed on insulators to prevent electrochemically/biochemically induced crevice corrosion especially occurring in tropical and coastal environments. The conventional way of developing SLIPS by chemical and physical etching might interfere with the mechanical stability of insulators composed of pin (galvanized steel), cement, and shell (porcelain).

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The influence of temperature, pollutant, and pH on the local corrosion rate of insulators installed in industrial, marine, and rural installation sites is investigated based on experimental and statistical investigations. The tensile load test confirms that corroded insulator specimens collected from industrial sites aged more than 10 years represent a minimum fracture load, 19,892 lbs. It was further observed that more than 91.

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Pin corrosion is a critical issue that causes premature rupture of high-voltage insulators. The development of efficient, defect-free, thermal resistive, hard, economical and environment-friendly sealing coating system is required to replace the current polymer-based highly toxic coatings for insulators. This study investigates the suitability of noble cerium (Ce)-based sealing coating film for use as an anti-corrosion coating for insulator pins installed in low-pH and highly corrosive sites.

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Overcoming hardware corrosion for high voltage insulators is a vital issue to prevent the sudden breakdown of insulators. The development of an efficient, economical, and eco-friendly anti-corrosion coating is essential to replace existing carcinogenic and toxic silicone-based coatings used by insulator industries. This article investigates the anticorrosion performance of a novel cerium-based sealing coating for insulator pins installed in highly corrosive (35 μm per year) industrial regions.

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Due to their great load-bearing capabilities, steel-cement interface structures are commonly employed in construction projects, and power utilities including electric insulators. The service life of the steel-cement interface is always decreasing owing to fracture propagation in the cement helped by steel corrosion. In this paper, a noble crack-resistant solution for steel-cement interfaces utilized in hostile outdoor environments is proposed.

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We developed and designed a bifacial four-terminal perovskite (PVK)/crystalline silicon (c-Si) heterojunction (HJ) tandem solar cell configuration albedo reflection in which the c-Si HJ bottom sub-cell absorbs the solar spectrum from both the front and rear sides (reflected light from the background such as green grass, white sand, red brick, roofing shingle, snow, etc.). Using the albedo reflection and the subsequent short-circuit current density, the conversion efficiency of the PVK-filtered c-Si HJ bottom sub-cell was improved regardless of the PVK top sub-cell properties.

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We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics.

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A hemisphere-array textured glass substrate was fabricated for the development of an improved thin-film (TF) silicon solar cell. The HF-HSO-etchant system influenced the light path owing to the formation of the strong fluorine-containing HSOF acid. In particular, the etching system of the various HF concentration with a constant HSO solution is related to make an improvement of optical transmittance and light trapping structure without a uniform pattern.

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We investigated high-efficiency two-terminal tandem photovoltaic (PV) devices consisting of a p/i/n thin film silicon top sub-cell (p/i/n-TFS) and a heterojunction with an intrinsic thin-layer (HIT) bottom sub-cell. We used computer simulations and experimentation. The short-circuit current density (J) of the top sub-cell limits the J of the p/i/n-TFS/HIT tandem PV device.

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Optical and electrical characteristics of n-type nano-crystalline-silicon oxide (n-µc-SiO:H) materials can be varied to optimize and improve the performance of a solar cell. In silicon heretojunction (SHJ) solar cells, it can be used to improve carrier selectivity and optical transmission at the front side, both of which are vitally important in device operation. For this purpose, the n-µc-SiO:H was investigated as the front surface field (FSF) layer.

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This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor. Although the deposition conditions are the same for both p-i-n and n-i-p cases, the substrate layers for depositing p-type microcrystalline silicon layers differ.

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