Optimization of fluorinated phenyl azides as universal photocrosslinkers for semiconducting polymers.

Fluorinated phenyl azides (FPA) enable photo-structuring of π-conjugated polymer films for electronic device applications. Despite their potential, FPAs have faced limitations regarding their crosslinking efficiency, and more importantly, their impact on critical semiconductor properties, such as charge-carrier mobility. Here, we report that azide photolysis and photocrosslinking can achieve unity quantum efficiencies for specific FPAs.

Effects of Planarization of the Triphenylamine Unit on the Electronic and Transport Properties of Triarylamine-Fluorene Copolymers in Both Doped and Undoped Forms.

Triarylamine--fluorene (TAF) copolymers are widely used for hole injection and transport in organic electronics. Despite suggestions to planarize the triphenylamine moiety, little research has been conducted. Here, we report a comprehensive investigation of the effects of planarization on the electronic and transport properties of a model TAF polymer semiconductor core.

Water binding and hygroscopicity in π-conjugated polyelectrolytes.

The presence of water strongly influences structure, dynamics and properties of ion-containing soft matter. Yet, the hydration of such matter is not well understood. Here, we show through a large study of monovalent π-conjugated polyelectrolytes that their reversible hydration, up to several water molecules per ion pair, occurs chiefly at the interface between the ion clusters and the hydrophobic matrix without disrupting ion packing.

Double-type-I charge-injection heterostructure for quantum-dot light-emitting diodes.

Enforcing balanced electron-hole injection into the emitter layer of quantum-dot light-emitting diodes (QLEDs) remains key to maximizing the quantum efficiency over a wide current density range. This was previously thought not possible for quantum dot (QD) emitters because of their very deep energy bands. Here, we show using Mesolight® blue-emitting CdZnSeS/ZnS QDs as a model that its valence levels are in fact considerably shallower than the corresponding band maximum of the bulk semiconductor, which makes the ideal double-type-I injection/confinement heterostructure accessible using a variety of polymer organic semiconductors as transport and injection layers.

Role of Linker Functionality in Polymers Exhibiting Main-Chain Thermally Activated Delayed Fluorescence.

Excellent performance has been reported for organic light-emitting diodes (OLEDs) based on small molecule emitters that exhibit thermally activated delayed fluorescence. However, the necessary vacuum processing makes the fabrication of large-area devices based on these emitters cumbersome and expensive. Here, the authors present high performance OLEDs, based on novel, TADF polymers that can be readily processed from a solution.

Overcoming the water oxidative limit for ultra-high-workfunction hole-doped polymers.

It is widely thought that the water-oxidation reaction limits the maximum work function to about 5.25 eV for hole-doped semiconductors exposed to the ambient, constrained by the oxidation potential of air-saturated water. Here, we show that polymer organic semiconductors, when hole-doped, can show work functions up to 5.

Improving organic photovoltaic cells by forcing electrode work function well beyond onset of Ohmic transition.

As electrode work function rises or falls sufficiently, the organic semiconductor/electrode contact reaches Fermi-level pinning, and then, few tenths of an electron-volt later, Ohmic transition. For organic solar cells, the resultant flattening of open-circuit voltage (V) and fill factor (FF) leads to a 'plateau' that maximizes power conversion efficiency (PCE). Here, we demonstrate this plateau in fact tilts slightly upwards.

Surface Doping of Organic Single-Crystal Semiconductors to Produce Strain-Sensitive Conductive Nanosheets.

A highly periodic electrostatic potential, even though established in van der Waals bonded organic crystals, is essential for the realization of a coherent band electron system. While impurity doping is an effective chemical operation that can precisely tune the energy of an electronic system, it always faces an unavoidable difficulty in molecular crystals because the introduction of a relatively high density of dopants inevitably destroys the highly ordered molecular framework. In striking contrast, a versatile strategy is presented to create coherent 2D electronic carriers at the surface of organic semiconductor crystals with their precise molecular structures preserved perfectly.

Multivalent anions as universal latent electron donors.

Electrodes with low work functions are required to efficiently inject electrons into semiconductor devices. However, when the work function drops below about 4 electronvolts, the electrode suffers oxidation in air, which prevents its fabrication in ambient conditions. Here we show that multivalent anions such as oxalate, carbonate and sulfite can act as powerful latent electron donors when dispersed as small ion clusters in a matrix, while retaining their ability to be processed in solution in ambient conditions.

Ohmic transition at contacts key to maximizing fill factor and performance of organic solar cells.

While thermodynamic detailed balance limits the maximum power conversion efficiency of a solar cell, the quality of its contacts can further limit the actual efficiency. The criteria for good contacts to organic semiconductors, however, are not well understood. Here, by tuning the work function of poly(3,4-ethylenedioxythiophene) hole collection layers in fine steps across the Fermi-level pinning threshold of the model photoactive layer, poly(3-hexylthiophene):phenyl-C-butyrate methyl ester, in organic solar cells, we obtain direct evidence for a non-ohmic to ohmic transition at the hole contact that lies 0.

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices.

Madelung and Hubbard interactions in polaron band model of doped organic semiconductors.

The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π-π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine-fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals.

Influence of interfacial area on exciton separation and polaron recombination in nanostructured bilayer all-polymer solar cells.

The macroscopic device performance of organic solar cells is governed by interface physics on a nanometer scale. A comb-like bilayer all-polymer morphology featuring a controlled enhancement in donor-acceptor interfacial area is employed as a model system to investigate the fundamental processes of exciton separation and polaron recombination in these devices. The different nanostructures are characterized locally by SEM/AFM, and the buried interdigitating interface of the final device architecture is statistically verified on a large area via advanced grazing incidence X-ray scattering techniques.

Suppressing recombination in polymer photovoltaic devices via energy-level cascades.

An energy cascading structure is designed in a polymer photovoltaic device to suppress recombination and improve quantum yields. By the insertion of a thin polymer interlayer with intermediate energy levels, electrons and holes can effectively shuttle away from each other while being spatially separated from recombination. An increase in open-circuit voltage and short-circuit current are observed in modified devices.

A general method for transferring graphene onto soft surfaces.

Recent advances in chemical vapour deposition have led to the fabrication of large graphene sheets on metal foils for use in research and development. However, further breakthroughs are required in the way these graphenes are transferred from their growth substrates onto the final substrate. Although various methods have been developed, as yet there is no general way to reliably transfer graphene onto arbitrary surfaces, such as 'soft' ones.

High internal quantum efficiency in fullerene solar cells based on crosslinked polymer donor networks.

The power conversion efficiency of organic photovoltaic cells depends crucially on the morphology of their donor-acceptor heterostructure. Although tremendous progress has been made to develop new materials that better cover the solar spectrum, this heterostructure is still formed by a primitive spontaneous demixing that is rather sensitive to processing and hence difficult to realize consistently over large areas. Here we report that the desired interpenetrating heterostructure with built-in phase contiguity can be fabricated by acceptor doping into a lightly crosslinked polymer donor network.

Interplay of processing, morphological order, and charge-carrier mobility in polythiophene thin films deposited by different methods: comparison of spin-cast, drop-cast, and inkjet-printed films.

The dependence of morphology and polymer-chain orientation of regioregular poly(3-hexylthiophene) (rrP3HT) thin films on processing conditions have been widely studied. However, their possible variation across the film thickness direction remains largely unknown. We report here a marked difference in the optical dielectric (n,k) spectra between the top and bottom interfaces of spin-cast (sc) rrP3HT films deposited from chlorobenzene solutions.

High-performance polymer semiconducting heterostructure devices by nitrene-mediated photocrosslinking of alkyl side chains.

Heterostructures are central to the efficient manipulation of charge carriers, excitons and photons for high-performance semiconductor devices. Although these can be formed by stepwise evaporation of molecular semiconductors, they are a considerable challenge for polymers owing to re-dissolution of the underlying layers. Here we demonstrate a simple and versatile photocrosslinking methodology based on sterically hindered bis(fluorophenyl azide)s.

Role of delta-hole-doped interfaces at Ohmic contacts to organic semiconductors.

An electromodulated absorption spectroscopy study of the contact between an organic semiconductor (OSC) poly(2,5-dialkoxy-p-phenylenevinylene) and p-doped poly(3,4-ethylenedioxythiophene) electrodes of different work functions (phivac) reveals direct evidence for the formation of a hole-doped layer at the OSC interface in equilibrium with high-phivac electrodes. When the hole density at this interface exceeds a few 10(11) cm(-2), degenerate "bandlike" polaron states emerge. This appears to be crucial to furnish efficient carrier injection into the bulk of the OSC to achieve Ohmic injection.

Direct evidence for the role of the madelung potential in determining the work function of doped organic semiconductors.

The work function of a model degenerately doped organic semiconductor p-doped poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) can be systematically tuned over an eV-wide range by exchanging excess matrix protons with spectator cations, without altering the organic semiconductor doping level or polaron density. Ultraviolet photoelectron spectroscopy reveals this to arise not from an interface dipole, but from a bulk effect due to a shift in the Madelung potential set up by the local counter- and spectator-ion structure at the polaron sites. Electrostatic modeling of this potential is in agreement with the observed shift in carrier energetics.

Deoxidation of graphene oxide nanosheets to extended graphenites by "unzipping" elimination.

Low-temperature scanning tunneling microscopy on alkyl-surface-functionalized graphene oxide nanosheets reveals the formation of low-dimensional graphenite nanostructures with extended pi-conjugation at deoxidation temperatures above 150 degrees C. The elimination of these alkyl chains from the surface of the nanosheets does not occur uniformly, but in distinctive patterns that correspond to the formation of an underlying network of graphenite one-dimensional "tracks" and "dots." Atomic-resolution imaging of these graphenite regions reveals a defective honeycomb lattice characteristic of single-layer graphenes.

Direct evidence for delocalization of charge carriers at the Fermi level in a doped conducting polymer.

The infrared absorption spectrum of the polaron charges at the Fermi level EF in a heavily p-doped conducting poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) film has been measured using interferogram-modulated Fourier-transform charge-modulation spectroscopy. The spectrum indicates softer phonons and weaker electron-phonon coupling riding on a strongly redshifted Drude-like electronic transition, different from the population-averaged "bulk" spectrum. This provides direct evidence that the EF holes are sufficiently delocalized even in such disordered materials to reside in an energy continuum (band states) while the rest of the hole population resides in self-localized gap states.

Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters.

Although organic semiconductors have received the most attention, the development of compatible passive elements, such as interconnects and electrodes, is also central to plastic electronics. For this, ligand-protected metal-cluster films have been shown to anneal at low temperatures below 250 degrees C to highly conductive metal films, but they suffer from cracking and inadequate substrate adhesion. Here, we report printable metal-cluster-polymer nanocomposites that anneal to a controlled-percolation nanostructure without complete sintering of the metal clusters.

Large damage threshold and small electron escape depth in X-ray absorption spectroscopy of a conjugated polymer thin film.

The information depth of near-edge X-ray absorption fine structure spectroscopy in the total electron yield mode (TEY-NEXAFS) is given by the escape depth of the TEY electrons z(TEY). This is determined by the effective ranges both of the inelastically scattered secondary electrons and of the primary excited electron before they thermalize below the vacuum level. For regioregular poly(3-hexylthiophene) (rreg-P3HT) thin films, we have measured the total electron emission efficiency to be 0.

General observation of n-type field-effect behaviour in organic semiconductors.

Organic semiconductors have been the subject of active research for over a decade now, with applications emerging in light-emitting displays and printable electronic circuits. One characteristic feature of these materials is the strong trapping of electrons but not holes: organic field-effect transistors (FETs) typically show p-type, but not n-type, conduction even with the appropriate low-work-function electrodes, except for a few special high-electron-affinity or low-bandgap organic semiconductors. Here we demonstrate that the use of an appropriate hydroxyl-free gate dielectric--such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref.