Ultra-compact diode-pumped single-frequency Ti:sapphire laser.

In this Letter, we report on the development of an ultra-compact single-frequency Ti:sapphire laser under direct diode pumping. Single-longitudinal-mode operation is realized from a miniature plane-parallel resonator using a volume Bragg grating as an output coupler. InGaN laser diodes operating at around 470 nm and 490 nm with a combined power of 6.

Intracavity Raman conversion of a red semiconductor disk laser using diamond.

We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%.

Frequency stabilization of an ultraviolet semiconductor disk laser.

We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency to a reference Fabry-Pérot cavity, the linewidth of the UV beam has been reduced to 16 kHz on short timescales and 50 kHz on a 1 s timescale, relative to the reference.

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser.

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a single-pass of the solid-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency.