Adhesion at the interface between dissimilar materials in the semiconductor industry is an important topic, but reliable quantitative methods for strongly adhesive or highly plastic layers are hardly available. This study aims to investigate the suitability of the cross-sectional nanoindentation (CSN) method for determination of the critical energy release rate of thin film stacks in the presence of a polyimide layer as a representative structure for such a case. For this purpose, the adhesion of a deliberately weakened Si/SiO interface in a Si/SiO/Al/SiN/polyimide stack is examined by systematic variation of the experimental parameters.
View Article and Find Full Text PDFLow-melting metal alloys have gained renewed attention for additive manufacturing, energy storage and microelectronics. However, micro- and nanostructure characterisation demands highly sophisticated sample preparation. Here, we optimise the Ga-FIB preparation of atom probe tomography (APT) specimens for low melting SAC305 solder materials utilising different FESEM/FIB stage temperatures.
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