Ultra-large optical modulation of electrochromic porous WO film and the local monitoring of redox activity.

Porous WO films with ultra-high transmittance modulation were successfully fabricated on different substrates by a novel, facile and economical pulsed electrochemical deposited method with 1.1 s interval time between each pulse. The near ideal optical modulation (97.

Inkjet-printed all solid-state electrochromic devices based on NiO/WO3 nanoparticle complementary electrodes.

Nanostructured thin films are important in the fields of energy conversion and storage. In particular, multi-layered nanostructured films play an important role as a part of the energy system for energy saving applications in buildings. Inkjet printing is a low-cost and attractive technology for patterning and deposition of multi-layered nanostructured materials on various substrates.

Nanostructured electrochromic films by inkjet printing on large area and flexible transparent silver electrodes.

Printed electrochromic flexible films were obtained by combining transparent silver grid electrodes formed by self-assembly and inkjet printed WO3 nanoparticles. Concentrated dispersions of WO3 nanoparticles were inkjet printed on transparent plastic silver grid electrodes with a high transparency of 83% in the spectral range of 400-800 nm, and a low sheet resistance in the range of 1-5 Ω sq(-1). These electrodes were used for electrochromic applications for the first time.

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates.

We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.

On practical charge injection at the metal/organic semiconductor interface.

We have revealed practical charge injection at metal and organic semiconductor interface in organic field effect transistor configurations. We have developed a facile interface structure that consisted of double-layer electrodes in order to investigate the efficiency through contact metal dependence. The metal interlayer with few nanometers thickness between electrode and organic semiconductor drastically reduces the contact resistance at the interface.

Solution-processed, Self-organized Organic Single Crystal Arrays with Controlled Crystal Orientation.

A facile solution process for the fabrication of organic single crystal semiconductor devices which meets the demand for low-cost and large-area fabrication of high performance electronic devices is demonstrated. In this paper, we develop a bottom-up method which enables direct formation of organic semiconductor single crystals at selected locations with desired orientations. Here oriented growth of one-dimensional organic crystals is achieved by using self-assembly of organic molecules as the driving force to align these crystals in patterned regions.