Synthesis of High Sn Content GeSiSn (0.1 < < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications.

A systematic effort has been described to grow ternary GeSiSn semiconductors on silicon with high Sn concentrations spanning the 9.5-21.2% range.

Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.

The GeSn-based quantum wells (QWs) have been investigated recently for the development of efficient GeSn emitters. Although our previous study indicated that the direct bandgap well with type-I band alignment was achieved, the demonstrated QW still has insufficient carrier confinement. In this work, we report the systematic study of light emission from the GeSn/GeSn/GeSn double QW structure.

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth.

Recent development of group-IV alloy GeSn indicates its bright future for the application of mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. However, its crystal growth remains a great challenge.