Publications by authors named "Pernot J"

Article Synopsis
  • * The study aimed to isolate bacteria from lung transplant patients' bronchoalveolar lavage fluid that could inhibit the growth of _Aspergillus_ spores using a new enrichment method, resulting in five effective bacterial strains.
  • * Although these bacterial strains can inhibit _Aspergillus_ growth, they also caused damage to lung cell cultures, indicating a complex relationship between these bacteria and lung health that requires further investigation.
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Collagen gels are the standard dermal equivalents par excellence, however the problem of rapid cell-mediated contraction remains unresolved. Therefore, the development of hybrid constructs (HCs) based on collagen and polymeric scaffolds is proposed to address the mechanical instability that usually limits the formation of new, functional tissue. Equally important, these synthetic structures should be temporary (degradable) while ensuring that cells are well-adapted to the new extracellular environment.

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Objectives: This study aims to demonstrate reduced iodine contrast media (CM) in routine abdominal CT scans in portal venous phase (PVP) using a photon-counting detector CT (PCD-CT) compared to total body weight (TBW) and kV-adapted CM injection protocols on a state-of-the-art energy-integrating detector CT (EID-CT) while maintaining sufficient image quality (IQ).

Materials And Methods: Consecutive contrast-enhanced abdominal PVP CT scans from an EID-CT (Nov 2022-March 2024) and a PCD-CT (Sep 2023-Dec 2023) were compared. CM parameters (total iodine load (TIL), iodine delivery rate (IDR) and dosing factor (DF)) were reported.

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Background And Methods: Little is known about self-induced cognitive trance (SICT) on respiratory function. The aims of this prospective, single-center, non-randomized, open-label study of healthy volunteers, were to characterize spirometry changes during SICT, confirm the safety of this technique, and investigate the potential clinical benefits of SICT.

Results: Nine people participated.

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Background: The identification of the first ventilatory threshold (VT1) on an incremental cardiopulmonary exercise test (CPET) is useful to guide exercise reconditioning. However, determination of the VT1 is sometimes difficult in patients with chronic respiratory disease. Our hypothesis was that it would be possible to identify a "clinical threshold" based on patients' perceptions at which they subjectively consider that they can perform endurance training during a rehabilitation programme.

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Molecular beam epitaxy growth and optical properties of GaN quantum disks in AlN nanowires were investigated, with the purpose of controlling the emission wavelength of AlN nanowire-based light emitting diodes. Besides GaN quantum disks with a thickness ranging from 1 to 4 monolayers, a special attention was paid to incomplete GaN disks exhibiting lateral confinement. Their emission consists of sharp lines which extend down to 215 nm, in the vicinity of AlN band edge.

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ZnO nanowires (NWs) grown by chemical bath deposition (CBD) have received great interest for nanoscale engineering devices, but their formation in aqueous solution containing many impurities needs to be carefully addressed. In particular, the pH of the CBD solution and its effect on the formation mechanisms of ZnO NWs and of nitrogen- and hydrogen-related defects in their center are still unexplored. By adjusting its value in a low- and high-pH region, we show the latent evolution of the morphological and optical properties of ZnO NWs, as well as the modulated incorporation of nitrogen- and hydrogen-related defects in their center using Raman and cathodoluminescence spectroscopy.

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Barrier integrity is central to the maintenance of healthy immunological homeostasis. Impaired skin barrier function is linked with enhanced allergen sensitization and the development of diseases such as atopic dermatitis (AD), which can precede the development of other allergic disorders, for example, food allergies and asthma. Epidemiological evidence indicates that children suffering from allergies have lower levels of dietary fibre-derived short-chain fatty acids (SCFA).

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Introduction: Physical activity in daily life (PA) in patients with chronic respiratory disease is reduced. Inactivity is associated with an increased risk of hospitalisation and mortality. Even though pulmonary rehabilitation (PR) is associated with improved quality of life (fewer symptoms, greater exercise capacity…), its benefits with regard to PA remain unclear.

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Developing nanoscale electrical characterization techniques adapted to three-dimensional (3D) geometry is essential for optimization of the epitaxial structure and doping process of nano- and microwires. In this paper, we demonstrate the assessment of the depletion width as well as the doping profile at the nanoscale of individual microwire core-shell light-emitting devices by capacitance-voltage measurements. A statistical study carried out on single wires shows the consistency of the doping profile values measured for individual microwires compared to assemblies of hundreds of wires processed on the same sample.

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Background: Allergic skin inflammation often presents in early childhood; however, little is known about the events leading to its initiation and whether it is transient or long-term in nature.

Objective: We sought to determine the immunologic rules that govern skin inflammation in early life.

Methods: Neonatal and adult mice were epicutaneously sensitized with allergen followed by airway allergen challenge.

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Efficient, mercury-free deep ultraviolet (DUV) light-emitting diodes (LEDs) are becoming a crucial challenge for many applications such as water purification. For decades, the poor p-type doping and difficult current injection of Al-rich AlGaN-based DUV LEDs have limited their efficiency and therefore their use. We present here the significant increase in AlN p-doping thanks to Mg/In codoping, which leads to an order of magnitude higher Mg solubility limit in AlN nanowires (NWs).

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In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system.

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Crosstalk between immune cells and the microbiota in mucosal tissues can set an individual on a trajectory toward health or disease. Little is known about these early-life events in the human respiratory tract. We examined bacterial colonization and immune system maturation in the lower airways over the first year of life.

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In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demonstrated to avoid such leaks.

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Dietary fiber protects against chronic inflammatory diseases by dampening immune responses through short-chain fatty acids (SCFAs). Here we examined the effect of dietary fiber in viral infection, where the anti-inflammatory properties of SCFAs in principle could prevent protective immunity. Instead, we found that fermentable dietary fiber increased survival of influenza-infected mice through two complementary mechanisms.

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In semiconductor nanowires (NWs) the exciton diffusion coefficient can be determined using a scanning electron microscope fitted with a cathodoluminescence system. High spatial and temporal resolution cathodoluminescence experiments are needed to measure independently the exciton diffusion length and lifetime in single NWs. However, both diffusion length and lifetime can be affected by the electron beam bombardment during observation and measurement.

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The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW.

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Article Synopsis
  • Accurately determining the electrical activity of dopants and surface charges in nanoscale objects is difficult, as many standard techniques only indicate the chemical presence of dopants, not their electrical properties.
  • The study employs cathodoluminescence and voltage contrast on a ZnO nanowire under bias, revealing an unusual linear increase in depletion length under reverse bias, which contrasts with typical bulk behavior that shows a square root dependence.
  • By integrating electron holography with simulations, the research estimates an n-doping level and negative surface charge, confirming the consistency between experimental and simulated results regarding the nanowire's undepleted core and active thickness.
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The characterization of nanowires (NWs) often requires the use of scanning electron beam techniques because of their high spatial resolution. However, the impact of the high energetic electron beam on the physical parameters under investigation is rarely taken into account. In this work, a combination of optical and electrical techniques is involved for the measurement of the electron beam dose (EBD) dependence of cathodoluminescence intensity, exciton diffusion length and electrical resistance in ZnO NWs.

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Article Synopsis
  • Using Kelvin probe force microscopy, researchers investigate the p-n junctions within GaN nanowires under both dark and UV light conditions.
  • They map out the contact potential differences to measure key characteristics like depletion width and junction voltage, finding that smaller diameter nanowires experience reduced built-in potential due to surface band bending.
  • The study reveals that shifts in Fermi levels are more impactful than surface band bending changes under illumination, providing valuable electrical data for the application of nanowire p-n junctions in photovoltaic and rectifying devices without needing ohmic contacts.
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Whereas nanowire (NW)-based devices offer numerous advantages compared to bulk ones, their performances are frequently limited by an incomplete understanding of their properties where surface effect should be carefully considered. Here, we demonstrate the ability to spatially map the electric field and determine the exciton diffusion length in NW by using an electron beam as the single excitation source. This approach is performed on numerous single ZnO NW Schottky diodes whose NW radius vary from 42.

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With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping.

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COLIBRI-COPD is a francophone consultation web portal accessible to pulmonologists in the hospital and in the community. We present this observation which describes the phenotype of COPD patients entered (anthropometry, exposures, addictions, functional impairments, questionnaires: MRC, DIRECT, CAT, HAD, Epworth, co-morbidities, incidence of exacerbations, drug treatment or other treatments). The results of the first 1079 patients show a high level of completeness for the main data items.

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Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM.

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