Thermal Simulation and Experimental Analysis of Optically Pumped InP-on-Si Micro- and Nanocavity Lasers.

There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, significant thermal issues affect their operation. The complexity of geometrical parameters and the various materials involved hinder the extraction of clear design guidelines and operation strategies. Here, we present a systematic thermal analysis of InP-on-Si micro- and nanocavity lasers based on steady-state and transient thermal simulations and experimental analysis.

Waveguide coupled III-V photodiodes monolithically integrated on Si.

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/InGaAs/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.

Scaling of metal-clad InP nanodisk lasers: optical performance and thermal effects.

A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate micro- and nanolasers of different shapes in InP by direct wafer bonding on Si.

Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region.

By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.