Publications by authors named "Pengshan Xie"

Article Synopsis
  • Traditional imaging systems face issues in low or complex light because of their fixed responses, leading to poor image quality.
  • A new bioinspired adaptive broadband image sensor using a combination of perovskite quantum dots and black phosphorus has been developed, allowing for better control and computing within an integrated array.
  • This sensor enhances image quality in varying lighting conditions and achieves over 85% accuracy in image restoration, making it a strong candidate for machine vision applications that require adaptive imaging.
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Biological vision is one of the most important parts of the human perception system. However, emulating biological visuals is challenging because it requires complementary photoexcitation and photoinhibition. Here, the study presents a bidirectional photovoltage-driven neuromorphic visual sensor (BPNVS) that is constructed by monolithically integrating two perovskite solar cells (PSCs) with dual-gate ion-gel-gated oxide transistors.

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Brain-like intelligence is ushering humanity into an era of the Internet of Perceptions (IoP), where the vast amounts of data generated by numerous sensing nodes pose significant challenges to transmission bandwidth and computing hardware. A recently proposed near-sensor computing architecture offers an effective solution to reduce data processing delays and energy consumption. However, a pressing need remains for innovative hardware with multifunctional near-sensor image processing capabilities.

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Article Synopsis
  • The introduction of p-type disordered tellurium oxide enhances device capabilities by enabling dual-mode reconfigurability, allowing it to function as both a logic transistor and a neuromorphic device.
  • The disordered surface of the tellurium oxide film improves oxygen adsorption, which helps regulate carrier concentration, resulting in high-performance characteristics with notable hole mobility and an impressive current ratio in transistor mode.
  • As a neuromorphic device, this technology mimics the vision of bees, effectively responding to blue-to-ultraviolet light, and achieving tasks like in-sensor denoising and image recognition in both static and dynamic environments.
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Article Synopsis
  • Wearable visual bionic devices are advancing thanks to artificial intelligence, but traditional silicon chips face issues with energy loss and mimicking biological functions.
  • This study introduces a van der Waals P3HT/GaAs nanowire P-N junction that enhances visual capabilities through innovative material arrangement.
  • The new system features low power consumption, impressive in-memory data processing, and high accuracy in color recognition, paving the way for advanced biomimetic visual technologies.
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As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge.

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Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.

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High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g.

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Enzyme-mimicking confined catalysis has attracted great interest in heterogeneous catalytic systems that can regulate the geometric or electronic structure of the active site and improve its performance. Herein, a liquid-assisted chemical vapor deposition (LCVD) strategy is proposed to simultaneously confine the single-atom Ru sites onto sidewalls and Janus Ni/NiO nanoparticles (NPs) at the apical nanocavities to thoroughly energize the N-doped carbon nanotube arrays (denoted as Ni/NiO@Ru-NC). The bifunctional Ni/NiO@Ru-NC electrocatalyst exhibits overpotentials of 88 and 261 mV for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) at 100 mA cm in alkaline solution, respectively, all ranking the top tier among the carbon-supported metal-based electrocatalysts.

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Optically readable organic synaptic devices have great potential in both artificial intelligence and photonic neuromorphic computing. Herein, a novel optically readable organic electrochemical synaptic transistor (OR-OEST) strategy is first proposed. The electrochemical doping mechanism of the device was systematically investigated, and the basic biological synaptic behaviors that can be read by optical means are successfully achieved.

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Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability.

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The operation stability of halide perovskite devices is the critical issue that impedes their commercialization. The main reasons are that the ambient H O molecules can easily deteriorate the perovskites, while the metal electrodes react in different degrees with the perovskites. Herein, one kind of new electrode, the metalloids, is reported, which are much more stable than the conventional noble metals as electrical contacts for halide perovskites.

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Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi O Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d ) of 4.

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Converting vapor precursors to solid nanostructures via a liquid noble-metal seed is a common vapor deposition principle. However, such a noble-metal-seeded process is excluded from the crystalline halide perovskite synthesis, mainly hindered by the growth mechanism shortness. Herein, powered by a spontaneous exothermic nucleation process (Δ < 0), the Au-seeded CsPbI nanowires (NWs) growth is realized based on a vapor-liquid-solid (VLS) growth mode.

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The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits.

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