Publications by authors named "Pengjian Lu"
Article Synopsis
- The study explores how aluminum (Al) interacts with chemical vapor deposited (CVD) silicon carbide (SiC) surfaces in the integrated circuit industry.
- It found that the contact angle of Al on SiC can be adjusted between 6° and 153° at temperatures between 1573 K and 1773 K, which is higher than values seen in polycrystalline and single crystal SiC.
- The presence of dislocations at the Al/SiC interface increases interfacial energy and results in a larger contact angle on the 〈111〉-oriented SiC compared to the 〈110〉 orientation.
Strong electromagnetic wave reflection loss concomitant with second emission pollution limits the wide applications of electromagnetic interference (EMI) shielding textiles. Decoration of textiles by using various dielectric materials has been found efficient for the development of highly efficient EMI shielding textiles, but it is still a challenge to obtain EMI shielding composites with thin thickness. A route of interfacial engineering may offer a twist to overcome these obstacles.
View Article and Find Full Text PDFThe use of hafnia (HfO) has facilitated recent advances in high-density microchips. However, the low deposition rate, poor controllability, and lack of systematic research on the growth mechanism limit the fabrication efficiency and further development of HfO films. In this study, the high-throughput growth of HfO films was realized laser chemical vapor deposition using a laser spot with a large gradient temperature distribution (100 K mm), in order to improve the experimental efficiency and controllability of the entire process.
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