Publications by authors named "Pengbo Nie"

Interfacial instability between solid electrolytes (SEs) and lithium metal remains a daunting challenge for solid-sate batteries. Here, a conformal C interlayer is efficiently constructed on LiAlGe(PO) (LAGP) SEs by physical vapor deposition, and an ideal interfacial contact is achieved via forming an ionically conducting matrix of LiC with lithium metal. The obtained LiC is beneficial to hinder the growth of lithium dendrites at interface and release the local stress during the lithiation and delithiation.

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Accurate and efficient screening of retired lithium-ion batteries from electric vehicles is crucial to guarantee reliable secondary applications such as in energy storage, electric bicycles, and smart grids. However, conventional electrochemical screening methods typically involve a charge/discharge process and usually take hours to measure critical parameters such as capacity, resistance, and voltage. To address this issue of low efficiency for battery screening, scanned X-ray Computed Tomography (CT) cross-sectional images in combination with a computational image recognition algorithm have been employed to explore the gradient screening of these retired batteries.

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Two-dimensional (2D) tungsten disulfide (WS) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications.

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Monolayer tungsten disulfide (WS) with a direct band gap of 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS.

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