Anti-Interference All-Optical Logic Computing Based on a 2D Polarization-Sensitive Photodiode.

Optical logic operation is promising for ultrafast information processing and optical computing due to the high computation speed and low power consumption. However, conventional optical logic devices require either a complex structure and circuit design or a constant voltage supply, which impedes the development of high-density integrated circuits. Here, all-optical logic devices are designed using a self-powered polarization-sensitive photodiode of the GeSe homojunction, which is attributed to an anisotropic band structure and built-in electric field.

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors.

Optoelectronic reconfigurable logic gates are promising candidates to meet the multifunctional and energy-efficient requirements of integrated circuits. However, complex device architectures need more power and hinder multifunctional device applications. Here, we design vertical field-effect transistors (VFET) based on the two-dimensional (2D) graphene/MoS/WSe/graphene van der Waals heterojunction forming ohmic and Schottky contact.

Logic Computing Field-Effect Transistors Based on a Monolayer WSe Homojunction for the Semi-adder and Decoder.

Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs for logic computing remains challenging. Here, by using density functional theory combined with the nonequilibrium Green's function method, we design a 5 nm split-gate FET based on a monolayer WSe homojunction, which can implement dynamic polarity control in different gate configurations.

Two-dimensional HfS-ZrS lateral heterojunction FETs with high rectification and photocurrent.

Multifunctional devices are an indispensable choice to fulfil the increasing demand for miniaturized and integrated circuit systems. However, bulk material-based devices encounter the challenge of miniaturized all-in-one systems with multiple functions. In this study, we designed a field effect transistor (FET) based on a monolayer HfS-ZrS lateral heterojunction.

Optoelectronic properties and applications of two-dimensional layered semiconductor van der Waals heterostructures: perspective from theory.

Van der Waals heterostructures (vdWHs) which combine two different materials together have attracted extensive research attentions due to the promising applications in optoelectronic and electronic devices, the investigations from theoretical simulations can not only predict the novel properties and the interfacial coupling, but also provide essential guidance for experimental verification and fabrications. This review summarizes the recent theoretical studies on electronic and optical properties of two-dimensional semiconducting vdWHs. The characteristics of different band alignments are discussed, together with the optoelectronic modulations from external fields and the promising applications in solar cells, tunneling field-effect transistors and photodetectors.

Promising ultra-short channel transistors based on OMS (M = Ga, In) monolayers for high performance and low power consumption.

It is hoped that two-dimensional (2D) semiconductors overcome the short channel effect and continue Moore's law. However, 2D material-based ultra-short channel devices still face the challenge of simultaneously achieving high-performance (HP) and low-power (LP) consumption. Here, we theoretically designed monolayer OMS (M = Ga, In)-based metal-oxide-semiconductor field-effect transistors (MOSFETs), considering the gate length from 1 to 5 nm, doping concentration and underlap structure.