Ground-to-UAV sub-terahertz channel measurement and modeling.

Unmanned aerial vehicle (UAV) assisted wireless communications have been expected to play a vital role in the next generation of wireless networks. UAVs can serve as either repeaters or data collectors within the communication link, thereby potentially augmenting the efficacy of communication systems. Despite their promise, the channel analysis and modeling specific to terahertz (THz) wireless channels leveraging UAVs remain under-explored.

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration.

A prototype of full-color active-matrix micro-light-emitting diode (micro-LED) micro-display with a pixel density of 391 pixel per inch (ppi) using InGaN/AlGaInP heterogeneous integration is demonstrated. InGaN blue/green dual-color micro-LED arrays realized on a single metal organic chemical vapor deposition (MOCVD)-grown GaN-on-Si epiwafer and AlGaInP red micro-LED arrays are both monolithically fabricated, followed by the integration with a common complementary metal oxide semiconductor (CMOS) backplane via flip-chip bonding technology to form a double-layer thin-film display structure. Full-color images with decent color gamut and brightness are successfully displayed through the fine adjustment of driving current densities of RGB subpixels.

Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs.

A full-color micro-display via bonding of a InGaN blue/green dual-wavelength light-emitting diode (LED) array and a AlGaInP red LED array is demonstrated. The micro-display has a 120 µm pixel pitch, and each pixel consists of 40 µm × 120 µm red/green/blue (R/G/B) subpixels. The red LED array was integrated with the blue/green dual-wavelength LED array by Au/In flip-chip bonding to achieve full-color emission.

848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production.

In this paper, fabrication processes of a 0.55-inch 400 × 240 high-brightness active-matrix micro-light-emitting diode (LED) display using GaN-on-Si epi-wafers are described. The micro-LED array, featuring a pixel size of 20 µm × 20 µm and a pixel density of 848 pixels per inch (ppi), was fabricated and integrated with a custom-designed CMOS driver through Au-Sn flip-chip bonding.