High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature.

H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device's performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H (4 nm)/ZnO (20 nm) double active layers by magnetron sputtering at room temperature, and studied the effect of the hydrogen flow ratio on the devices' performance.

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors.

We demonstrate the growth of ultra-thin (~5 nm) indium ytterbium oxide (In-Yb-O) thin film using a simple vacuum-free aqueous solution approach for the first time. The influences of Yb addition on the microstructural, chemical, optical, and electrical properties of InO are well investigated. The analyses indicate that Yb dopant could suppress oxygen vacancy defects effectively owing to the lower standard electrode potential, lower electronegativity, and stronger metal-oxide bond strength than that of In.

Water-Processed Ultrathin Crystalline Indium-Boron-Oxide Channel for High-Performance Thin-Film Transistor Applications.

Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium-boron-oxide (In-B-O) channel layer for high-performance TFTs.

High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride.

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional AlO capping in flexible and transparent 2D device applications.

Great Enhancement Effect of 20-40 nm Ag NPs on Solar-Blind UV Response of the Mixed-Phase MgZnO Detector.

High-performance solar-blind UV detector with high response and fast speed is needed in multiple types of areas, which is hard to achieve in one device with a simple structure and device fabrication process. Here, the effects of Ag nanoparticles (NPs) with different sizes on UV response characteristics of the device are studied, the Ag NPs with different sizes that are made from a simple vacuum anneal method. Ag NPs with different sizes could modulate the peak response position of the mixed-phase MgZnO detector from near UV range (350 nm) to deep UV range (235 nm), and the enhancement effect of the Ag NPs on the UV response differs much with the crystal structure and the basic UV response of the MgZnO thin film.

UV response characteristics of mixed-phase MgZnO thin films with different structure distribution and high I/Iratio and fast speed MgZnO UV detector with tunneling breakdown mechanism.

High performance UV detector with both high response and fast speed is hard to made on homogeneous crystal semiconductor materials. Here, the UV response characteristics of mix-phase MgZnO thin films with different internal structure distribution are studied, the mix-phase MgZnO based detector with given crystal composition own high response at both deep UV light (96 A/W at 240nm) and near UV light (80 A/W at 335nm). Meanwhile, because of quasi-tunneling breakdown mechanism within the device, the high response UV detector also show fast response speed (t= 0.

Solar-Blind Photodetector with Lower Dark Current and Higher / Ratio Based on MgZnO Film Deposited by Pulsed Laser Deposition Method.

In this study, pulsed laser deposition method (PLD) was employed to grow MgZnO films on quartz substrates. The optimal deposition temperature of 300 °C for MgZnO film was decided and MgZnO, MgZnO and MgZnO films were grown respectively using MgZnO targets with different Mg contents ( = 0.3, 0.

Electric field controlled near-infrared high-speed electro-optic switching modulator integrated with 2D MgO.

The electro-optic effect in two-dimensional (2D) MgO nanoflakes synthesized by a microwave-assisted process is demonstrated using a designed optical fiber modulator. The guiding properties of intense core modes excited by the material cavity are modulated by the external electric field. The feasibility of 2D MgO nanoflakes as an effective electro-optic modulator and switching are experimentally verified for the first time, to the best of our knowledge.

Flat-Type Gas Sensors Based on ZnO Nanorod Arrays.

ZnO seed layers were deposited on silicon and sapphire substrates by the pulsed laser deposition (PLD) method, and ZnO nanorod arrays with different orientation degrees were grown using the chemical vapor deposition (CVD) method. Flat-type gas sensors based on the ZnO nanorod arrays were fabricated, and their gas sensitivity properties were studied. The ZnO seed layer with a thickness of approximately 450 nm exhibits high c-axis orientation and possesses few defects.

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors.

Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development.

Electric field modulation in the auxetic effect of BP-analog monolayer As and Sb by first-principles calculations.

In this paper, we have introduced the auxetic effect in black phosphorus (BP) analog Sb and achieved auxetic modulations in monolayer As and Sb via first-principles calculations. Compared with monolayer As, the monolayer Sb is phonon unstable. By applying uniaxial strain along each direction, we discovered zigzag-vertical reversibility on out-of-plane auxeticity, and the negative Poisson's ratios for monolayer As and Sb were simulated to be -0.

Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped GaO Thin Films.

A high-performance solar-blind photodetector with a metal-semiconductor-metal structure was fabricated based on amorphous In-doped GaO thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.

High Sensitivity NO₂ Gas Sensor Based on 3D WO₃ Microflowers Assembled by Numerous Nanoplates.

Tungsten oxide microflowers (WO₃ MFs) were fabricated by a simple hydrothermal process through adjusting the pH of the solution by HCl. These MFs possess the outer diameters of about 2 m and are composed of numerous nanoplates with the average pore size of 10.9 nm.

Solar-Blind Photodetector with Lower Dark Current and Higher / Ratio Based on MgZnO Film Deposited by Pulsed Laser Deposition Method.

In this study, pulsed laser deposition method (PLD) was employed to grow MgZnO films on quartz substrates. The optimal deposition temperature of 300 °C for MgZnO film was decided and MgZnO, MgZnO and MgZnO films were grown respectively using MgZnO targets with different Mg contents ( = 0.3, 0.

Polymer-Assisted Deposition of Gallium Oxide for Thin-Film Transistor Applications.

We report the fabrication of gallium oxide (GaO) thin films by a novel polymer-assisted deposition (PAD) method. The influence and mechanism of postannealing temperature (200-800 °C) on the formation and properties of GaO thin films are investigated by complementary characterization analyses. The results indicate that solution-deposited GaO experiences the elimination of organic residuals as well as the transformation of amorphous GaO to crystalline GaO with the increase in annealing temperature.

Field Emission Properties of Molybdenum Nanoparticles Decorated ZnO Nanorod Arrays.

Precisely controlled dimensions of heterostructured ZnO nanorod arrays were grown on micropatterned Au films supported by Si substrate using chemical vapor deposition (CVD). The field emission properties were attributed to pointed nanorods, thickness of catalyst, preferential growth, density, morphology of ZnO and Molybdenum (Mo) decorated ZnO nanorod arrays (Mo/ZnO). The selective restrained heterostructure approach resulted in excellent control over periodicity, location and density of ZnO nanorod arrays.

"Secondary Growth" in Hydrothermal Synthesis of Aligned ZnO Nanostructures and Its Application in Dye-Sensitized Solar Cells.

One-dimensional (1D) aligned ZnO nanostructures were prepared on ZnO film seeded substrates using a low-temperature hydrothermal method, and zinc nitrate and hexamethylenetetramine (HMT) precursors. It was observed that increasing the concentration ratio of Zn2+/HMT from 1 to 100 led to a "secondary growth," and a change in the morphologies of the ZnO nanostructures from arrays of thick nanorods to arrays of thin nanorod-step-thick nanorods. The morphological evolution of ZnO nanostructures with increased growth time at high Zn2+/HMT concentration ratios showed the same transformation.

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process.

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating.

Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e.