Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement.

We reported transport diagrams of self-assembled germanium (Ge) double quantum-dots (DQDs) using direct current measurement under illumination at wavelength (λ) of 850 nm and at the base temperature of 4.5 K. Ge DQDs with a coupling-barrier of Si, tunneling-barriers of SiN, and self-aligned p-Si reservoirs were fabricated in a self-organized CMOS approach.

Determination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pumping.

We reported exciton binding-energy determination using tunneling-current spectroscopy of Germanium (Ge) quantum dot (QD) single-hole transistors (SHTs) operating in the few-hole regime, under 405-1550 nm wavelength (λ) illumination. When the photon energy is smaller than the bandgap energy (1.46 eV) of a 20 nm Ge QD (for instance, λ = 1310 nm and 1550 nm illuminations), there is no change in the peak voltages of tunneling current spectroscopy even when the irradiation power density reaches as high as 10 µW/µm.

Combining CHADS-VASc score into RCRI for prediction perioperative cardiovascular outcomes in patients undergoing non-cardiac surgery: a retrospective pilot study.

Background: Treatment decisions in patients undergoing non-cardiac surgery are based on clinical assessment. The Revised Cardiac Risk Index (RCRI) is pragmatic and widely used but has only moderate discrimination. We aimed to test the efficacy of the CHADS-VASc score and the combination of CHADS-VASc and RCRI to predict perioperative risks for non-cardiac surgery.

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices.

Semiconductor-based quantum registers require scalable quantum-dots (QDs) to be accurately located in close proximity to and independently addressable by external electrodes. Si-based QD qubits have been realized in various lithographically-defined Si/SiGe heterostructures and validated only for milli-Kelvin temperature operation. QD qubits have recently been explored in germanium (Ge) materials systems that are envisaged to operate at higher temperatures, relax lithographic-fabrication requirements, and scale up to large quantum systems.

Topology, tissue distribution, and transcriptional level of SLC34s in response to Pi and pH in grass carp Ctenopharyngodon idella.

In the present study, two new SLC34 family members, named slc34a1b and slc34a2a, were isolated and characterized from grass carp Ctenopharyngodon idella. Topology, tissue distribution, and transcriptional response to phosphorus (Pi) and pH were compared among three members of SLC34 family (slc34a1b, slc34a2a, and slc34a2b) in grass carp. The length of validated cDNAs of grass carp slc34a1b and slc34a2a was 1494 bp and 1902 bp, and these two cDNAs encoded 497 and 633 amino acid residues, respectively.

Differences in perioperative cardiovascular outcomes in elderly male and female patients undergoing intra-abdominal surgery: a retrospective cohort study.

Objective: Perioperative cardiovascular events constitute the majority of complications in noncardiac surgery. Older and female patients have been less investigated. We aimed to evaluate differences in perioperative cardiovascular outcomes by age and sex.

Enhancement of Antitumor Efficacy of Paclitaxel-Loaded PEGylated Liposomes by N,N-Dimethyl Tertiary Amino Moiety in Pancreatic Cancer.

Introduction: Pancreatic cancer, or pancreatic duct adenocarcinoma (PDAC), remains one of the most lethal cancers and features insidious onset, highly aggressive behavior and early distant metastasis. The dense fibrotic stroma surrounding tumor cells is thought to be a shield to resist the permeation of chemotherapy drugs in the treatment of PDAC. Thus, we synthesized a pancreas-targeting paclitaxel-loaded PEGylated liposome and investigated its antitumor efficacy in the patient-derived orthotopic xenograft (PDOX) nude mouse models of PDAC.

Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features.

Due to their inherent physical properties, thin-film Si/SiGe heterostructures have specific thermal management applications in advanced integrated circuits and this in turn is essential not only to prevent a high local temperature and overheat inside the circuit, but also generate electricity through the Seebeck effect. Here, we were able to enhance the Seebeck effect in the germanium composite quantum dots (CQDs) embedded in silicon by increasing the number of thin silicon layers inside the dot (multi-fold CQD material). The Seebeck effect in the CQD structures and multi-layer boron atomic layer-doped SiGe epitaxial films was studied experimentally at temperatures in the range from 50 to 300 K and detailed calculations for the Seebeck coefficient employing different scattering mechanisms were made.

Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe.

We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of SiGe at high temperature. Pairs of spherical-shaped Ge QDs were formed by the selective oxidation of poly-SiGe spacer islands at each sidewall corner of the nano-patterned SiN/poly-Si ridges. The diameters of the Ge spherical QDs are essentially determined by geometrical conditions (height, width, and length) of the nano-patterned spacer islands of poly-SiGe, which are tunable by adjusting the process times of deposition and etch back for poly-SiGe spacer layers in combination with the exposure dose of electron-beam lithography.

Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited SiN for advanced complementary metal-oxide-semiconductor photonics and electronics applications.

A new phenomenon of highly localized, nanoscale densification and crystallization of silicon-nitride (SiN) layers has been observed. A drastic reduction in the thermal budget (temperature and processing time) for local densification and even nanocrystallization of low-pressure chemical vapor deposited amorphous SiN layers is mediated by the presence of Ge, Si, and O interstitials in close proximity to the SiN. The enhancement of localized densification and nanocrystallization observed in SiN layers appears to be catalyzed by proximal Ge quantum dots (QDs) 'migrating' through the SiN/Si layers and are influenced by the oxidation time and Ge QD size.

A novel gemcitabine derivative-loaded liposome with great pancreas-targeting ability.

Gemcitabine (Gem) is a standard first-line treatment for pancreatic cancer (PC). However, its chemotherapeutic efficacy is hampered by various limitations such as short half-life, metabolic inactivation, and lack of tumor localizing. We previously synthesized a lipophilic Gem derivative (Gem formyl hexadecyl ester, GemC16) that exhibited improved antitumor activity in vitro.

Primary hyperparathyroidism due to ectopic parathyroid adenoma in an adolescent: a case report and review of the literature.

Purpose: Primary hyperparathyroidism (PHPT) is a common endocrine disorder and is usually diagnosed in adults. PHPT due to ectopic parathyroid adenoma in adolescents is rare.

Methods: We describe the case of a 15-year-old boy with PHPT due to ectopic parathyroid adenoma.

Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO/SiGe photoMOSFETs under gate modulation.

We report a novel visible-near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO/Ge-dot/SiO/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000-3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 10-10A/A with a wide dynamic power range of at least 6 orders of magnitude (nW-mW) linearity at 400-1250 nm illumination, depending on whether the photoMOSFET operates at V = + 3- + 4.

High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects.

We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850-1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO/Ge-dot/SiO/SiGe-channel which is simultaneously fabricated in a single oxidation step. Superior control of the geometrical size and chemical composition for our Ge nanodots/SiO/SiGe-shell MOS structure enables the practically-achievable, gate-stacking design for our Ge-dot photoMOSFETs.

[Treatment Ideas and Methods for Treating Breast Cancer Guided by Molecular Classification].

The gene types of breast cancer can be classified into three types according to its molecules: Luminal type A, Luminal type B, HER-2-positive type, triple negative type. Authors combined pathological characteristics of breast cancer, biological characteristics, and comprehensive treatment, used syndrome typing based medication, and explored treatment meticulous ideas and methods of "treating the same disease with different methods" as well as "different treatment methods in accordance with patients individually".

Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection.

We demonstrate an effective approach to grow high-quality thin film (>1  μm) of multifold Ge/Si/Ge composite quantum dots (CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.

Ligustrazine monomer against cerebral ischemia/reperfusion injury.

Ligustrazine (2,3,5,6-tetramethylpyrazine) is a major active ingredient of the Szechwan lovage rhizome and is extensively used in treatment of ischemic cerebrovascular disease. The mechanism of action of ligustrazine use against ischemic cerebrovascular diseases remains unclear at present. This study summarizes its protective effect, the optimum time window of administration, and the most effective mode of administration for clinical treatment of cerebral ischemia/reperfusion injury.

A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step.

We report a first-of-its-kind, unique approach for generating a self-aligned, gate-stacking heterostructure of Ge quantum dot (QD)/SiO2/SiGe shell on Si in a single fabrication step. The 4-nm-thick SiO2 layer between the Ge QD and SiGe shell fabricated during the single-step process is the result of an exquisitely controlled dynamic balance between the fluxes of oxygen and silicon interstitials. The high-quality interface properties of our "designer" heterostructure are evidenced by the low interface trap density of as low as 2-4 × 10(11) cm(-2) eV(-1) and superior transfer characteristics measured for Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs).

A model for predicting the thermal conductivity of SiO2-Ge nanoparticle composites.

We present a simple theoretical model that predicts the thermal conductivity of SiO2 layers with embedded Ge quantum dots (QDs). Overall, the resulting nanoscale architecture comprising the structural relaxation in the SiO2 matrix, deviation in mass density of the QDs compared to the surrounding matrix and local strains associated with the dots are all likely to enhance phonon scattering and thus reduce the thermal conductivity in these systems. We have found that the conductivity reduction can be predicted by the dot-induced local elastic perturbations in SiO2.

The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient.

We report a unique growth and migration behavior of Ge nanocrystallites mediated by the presence of Si interstitials under thermal annealing at 900°C within an H2O ambient. The Ge nanocrystallites were previously generated by the selective oxidation of SiGe nanopillars and appeared to be very sensitive to the presence of Si interstitials that come either from adjacent Si3N4 layers or from within the oxidized nanopillars. A cooperative mechanism is proposed, wherein the Si interstitials aid in both the migration and coarsening of these Ge nanocrystallites through Ostwald ripening, while the Ge nanocrystallites, in turn, appear to enhance the generation of Si interstitials through catalytic decomposition of the Si-bearing layers.

The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation.

We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si3N4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs 'explode,' regressing back almost to their origins as individual Ge nuclei as formed during the oxidation of the original nanopatterned SiGe structures used for their generation. A kinetics-based model is proposed to explain the anomalous migration behavior and morphology changes of the Ge QDs based on the Si flux generated during the oxidation of Si-containing layers.

[Analysis of perioperative cardiovascular events and related risk factors in patients undergoing intraperitoneal surgery].

Objectives: To investigate incidence of perioperative cardiovascular events, to analyze related risk factors for the patients undergoing intraperitoneal surgery.

Methods: The data of 1079 patients who underwent intraperitoneal surgery (exclude laparoscope surgery) from July 2007 to June 2008 was reviewed and analyzed.

Results: For the patients undergoing intraperitoneal surgery, the incidence of major cardiovascular events was 3.

Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by 'burrowing' Ge quantum dots.

A new phenomenon of highly localized, nanoscale oxidation of silicon-containing layers has been observed. The localized oxidation enhancement observed in both Si and Si(3)N(4) layers appears to be catalyzed by the migration of Ge quantum dots (QDs). The sizes, morphology, and distribution of the Ge QDs are influenced by the oxidation of the Si-bearing layers.