Polarization response of artificially structured nano-antennas can be exploited to design innovative optical components, also dubbed "vectorial metasurfaces", for the modulation of phase, amplitude, and polarization with subwavelength spatial resolution. Recent efforts in conceiving Jones matrix formalism led to the advancement of vectorial metasurfaces to independently manipulate any arbitrary phase function of orthogonal polarization states. Here, we are taking advantages of this formalism to design and experimentally validate the performance of CMOS compatible Jones matrix metasurfaces monolithically integrated with standard VCSELs for on-chip spin-decoupling and phase shaping.
View Article and Find Full Text PDFMetasurface polarization optics that consist of 2D array of birefringent nano-antennas have proven remarkable capabilities to generate and manipulate vectorial fields with subwavelength resolution and high efficiency. Integrating this new type of metasurface with the standard vertical cavity surface-emitting laser (VCSEL) platform enables an ultracompact and powerful solution to control both phase and polarization properties of the laser on a chip, which allows to structure a VCSEL into vector beams with on-demand wavefronts. Here, this concept is demonstrated by directly generating versatile vector beams from commercially available VCSELs through on-chip integration of high-index dielectric metasurfaces.
View Article and Find Full Text PDFVertical cavity surface-emitting lasers (VCSELs) have made indispensable contributions to the development of modern optoelectronic technologies. However, arbitrary beam shaping of VCSELs within a compact system has remained inaccessible until now. The emerging ultra-thin flat optical structures, namely metasurfaces, offer a powerful technique to manipulate electromagnetic fields with subwavelength spatial resolution.
View Article and Find Full Text PDFVan der Waals heterostructures (vdWHs) have opened new avenues for fundamental scientific studies and design of novel devices. Although numerous reports have demonstrated vdWH optoelectronic devices, no report on vdWH lasers can be found to date. In this paper we demonstrated electrically driven vdWH lasers for the first time, and the lasers were realized from ZnO microwire/MgO/p-GaN structures.
View Article and Find Full Text PDFACS Appl Mater Interfaces
June 2014
By taking semiconductors with different band-gap energies as the active layers and controlling the electron-hole recombination region through the electric field, bias-polarity dependent ultraviolet/visible switchable light-emitting devices have been realized in Au/MgO/Mg0.49Zn0.51O/MgxZn1-xO/n-ZnO structures, of which the emission bands can be switched from the ultraviolet region to the orange region by changing the polarity of the applied bias.
View Article and Find Full Text PDF