Structural and vibrational properties of SbS: Practical methodologies for accelerated research and application of this low dimensional material.

Recently, the interest for the family of low dimensional materials has increased significantly due to the anisotropic nature of their fundamental properties. Among them, antimony sulfide (SbS) is considered a suitable material for various solid-state devices. Although the main advantages and physicochemical properties of SbS are known, some doubtful information remains in literature and methodologies to easily assess its critical properties are missing.

Does SbSe Admit Nonstoichiometric Conditions? How Modifying the Overall Se Content Affects the Structural, Optical, and Optoelectronic Properties of SbSe Thin Films.

SbSe is a quasi-one-dimensional (1D) semiconductor, which has shown great promise in photovoltaics. However, its performance is currently limited by a high deficit. Therefore, it is necessary to explore new strategies to minimize the formation of intrinsic defects and thus unlock the absorber's whole potential.

Controlling the Anionic Ratio and Gradient in Kesterite Technology.

Accurate anionic control during the formation of chalcogenide solid solutions is fundamental for tuning the physicochemical properties of this class of materials. Compositional grading is the key aspect of band gap engineering and is especially valuable at the device interfaces for an optimum band alignment, for controlling interface defects and recombination and for optimizing the formation of carrier-selective contacts. However, a simple and reliable technique that allows standardizing anionic compositional profiles is currently missing for kesterites and the feasibility of achieving a compositional gradient remains a challenging task.

Is It Possible To Develop Complex S-Se Graded Band Gap Profiles in Kesterite-Based Solar Cells?

This work presents the development of a novel chalcogenization process for the fabrication of CuZnSn(S,Se) (CZTSSe or kesterite)-based solar cells that enable the generation of sharp graded anionic compositional profiles with high S content at the top and low S content at the bottom. This is achieved through the optimization of the annealing parameters including the study of several sulfur sources with different predicted reactivities (elemental S, thiourea, SnS, and SeS). As a result, depending on the sulfur source employed, devices with superficially localized maximum sulfur content between 50 and 20% within the charge depletion zone and between 10 and 30% toward the bulk material are obtained.