A Time-Domain Perspective on the Structural and Electronic Response in Epitaxial Ferroelectric Thin Films on Silicon.

This operando study of epitaxial ferroelectric Pb(ZrTi)O capacitors on silicon substrates studies their structural response via synchrotron-based time-resolved X-ray diffraction during hysteresis-loop measurements in the 2-200 kHz range. At high frequencies, the polarization hysteresis loop is rounded and the classical butterfly-like strain hysteresis acquires a flat dumbbell shape. We explain these observations from a time-domain perspective: The polarization and structural motion within the unit cell are coupled to the strain by the piezoelectric effect and limited by domain wall velocity.

Finite size effects on the metamagnetic phase transition in a thick B2 FeRh nanocluster film.

FeRh alloys in the CsCl-type (B2) chemically ordered phase present an antiferromagnetic to ferromagnetic order transition around 370 K observed in bulk and continuous films but absent in nanoclusters. In this study, we investigate the thermal magnetic behavior of a thick film composed of assembled FeRh nanoclusters preformed in the gas phase. This work reveals a broad and asymmetric metamagnetic transition with a consequent residual magnetization at low temperature.

Quantification of Crystalline Phases in HfZrO Thin Films through Complementary Infrared Spectroscopy and Supercell Simulations.

In the quest for thinner and more efficient ferroelectric devices, HfZrO (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with thicknesses ranging from 10 to 52 nm, both within and out of the ferroelectric thickness range where ferroelectric properties are observed.

SiN half-etch horizontal slot waveguides for integrated photonics: numerical modeling, fabrication, and characterization of passive components.

This work presents a "half-etch" horizontal slot waveguide design based on SiN, where only the upper SiN layer is etched to form a strip that confines the mode laterally. The numerical modeling, fabrication, and characterization of passive waveguiding components are described. This novel slot waveguide structure was designed with on-chip light amplification in mind, for example with an Er-doped oxide spacer layer.

Low-voltage, broadband graphene-coated Bragg mirror electro-optic modulator at telecom wavelengths.

We demonstrate a graphene based electro-optic free-space modulator yielding a reflectance contrast of 20% over a strikingly large 250nm wavelength range, centered in the near-infrared telecom band. Our device is based on the original association of a planar Bragg reflector, topped with an electrically contacted double-layer graphene capacitor structure employing a high work-function oxide shown to confer a static doping to the graphene in the absence of an external bias, thereby reducing the switching voltage range to +/-1V. The device design, fabrication and opto-electric characterization is presented, and its behavior modeled using a coupled optical-electronic framework.

Modeling the anisotropic electro-optic interaction in hybrid silicon-ferroelectric optical modulator.

We present a numerical method to accurately model the electro-optic interaction in anisotropic materials. Specifically, we combine a full-vectorial finite-difference optical mode solver with a radio-frequency solver to analyze the overlap between optical modes and applied electric field. This technique enables a comprehensive understanding on how electro-optic effects modify individual elements in the permittivity tensor of a material.

Nanoparticles selectively immobilized onto large arrays of gold micro and nanostructures through surface chemical functionalizations.

Latex nanoparticles (100nm and 200nm diameter) were precisely located onto the gold regions of micro and nanopatterned gold/silica substrates through surface chemical functionalizations. The gold patterns were selectively functionalized with alkylthiols bearing biotin or amine headgroups. This selective functionalization allowed the trapping of streptavidin- or carboxy-functionalized latex nanoparticles onto the gold structures with very little non-specific adsorption onto the surrounding silica.

Dual-wavelength micro-resonator combining photonic crystal membrane and Fabry-Perot cavity.

We propose a novel system of dual-wavelength micro-cavity based on the coupling between a photonic crystal membrane (PCM); operating at the Γ- point of the Brillouin zone, with a Fabry-Perot vertical cavity (FP). The optical coupling, which can be adjusted by the overlap between both optical modes, leads to the generation of two hybrid modes separated by a frequency difference which can be tuned using micro-opto-electromechanical structures. The proposed dual-wavelength micro-cavity is attractive for application where dual-mode behaviour is desirable as dual-lasing, frequency conversion.

Surface emitting microlaser based on 2D photonic crystal rod lattices.

2D photonic crystal (2D PC) structures consisting in a square lattice of Indium Phosphide (InP) microrods bonded on a Silicon/Silica Bragg mirror are experimentally investigated. We focus on slow Bloch modes above the light line, especially at the Gamma-point where a vertical emission can be obtained. Stimulated emission around 1.

A simple perturbative analysis for fast design of an electrically pumped micro-disk laser.

A perturbative analysis is proposed to estimate optical losses for electrically pumped micro-disk lasers. The optical field interaction with the electrical contacts and the optimization of their implementation is investigated. Our model shows a good agreement with 3D Finite Difference Time Domain (FDTD) computation and can be used for designing contacts for thin micro-disks, with a considerably reduced calculation time.

Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity.

A compact electro-optic modulator on silicon-on-insulator is presented. The structure consists of a III-V microdisk cavity heterogeneously integrated on a silicon-on-insulator wire waveguide. By modulating the loss of the active layer included in the cavity through carrier injection, the power of the transmitted light at the resonant wavelength is modulated; approximately 10 dB extinction ratio and 2.

Coupling analysis of heterogeneous integrated InP based photonic crystal triangular lattice band-edge lasers and silicon waveguides.

In recent years, many groups have envisioned the possibility of integrating optical and electronic devices in a single chip. In this paper, we study the integration of a photonic crystal laser fabricated in InP with a silicon passive waveguide. The coupling of energy between a 2D photonic crystal (PhC) triangular lattice band-edge laser and waveguide positioned underneath is analyzed in this paper.

Directional channel-drop filter based on a slow Bloch mode photonic crystal waveguide section.

A two-dimensional photonic crystal channel-drop filter is proposed. This device has two high group velocity waveguides that are selectively coupled by a single, low group velocity intermediate waveguide section. It exhibits computed quality factors as high as 1300, and directional dropping efficiencies as high as 90%.

Analysis of hybrid photonic crystal vertical cavity surface emitting lasers.

Vertical resonators with a top mirror constituted of 1D photonic crystal membrane on top of a Bragg stack are investigated in this paper. These structures allow the fabrication of compact vertical-cavity surfaceemitting lasers, which can be designed, in addition, for in-plane emission. With this hybrid approach, fabrication problems related to both classical VCSEL and Photonic Crystal lasers may be significantly relaxed, given that a full Bragg stack is replaced by a single photonic crystal membrane and that the Photonic Crystal is not formed in the active gain layer.