AlSiC is a ternary wide-band-gap semiconductor with a high strength-to-weight ratio and excellent oxidation resistance. It consists of slabs of AlC separated by SiC layers with the space group of 6. The space group allows Si to occupy two different 2 Wykoff sites, with previous studies reporting that Si occupies only one of the two sites, giving it an ordered structure.
View Article and Find Full Text PDFThe multicomponent alloy HfNbTiVZr has been described as a single-phase high-entropy alloy (HEA) in the literature, although some authors have reported that additional phases can form during annealing. The thermal stability of this alloy has therefore been investigated with a combination of experimental annealing studies and thermodynamic calculations using the CALPHAD approach. The thermodynamic calculations show that a single-phase HEA is stable above about 830 °C.
View Article and Find Full Text PDFActa Crystallogr Sect E Struct Rep Online
November 2011
The title compound, tricalcium oxynitride silicate, with composition Ca(3-x)Si(2)N(2-2x)O(4+2x) (x ≃ 0.12), is a perovskite-related calcium oxynitrido silicate containing isolated oxynitrido silicate 12-rings. The N atoms are statistically disordered with O atoms (occupancy ratio N:O = 0.
View Article and Find Full Text PDFSeparated Zn cluster entities unexpectedly occur in the solid-state structure of Mn Ga Zn (the central building block is shown). They correspond to centered cuboctahedra, that is, small volumes of face-centered cubic metal. The intriguing segregation of Ga and Zn atoms in Mn Ga Zn was verfied by Rietveld refinement of neutron powder diffraction data.
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