Monolithically integrated L-band PICs and transceiver modules with 6λ x 200 Gbps (1.2 Tbps) for C + L band communication systems.

We present monolithically integrated multi-channel coherent L-band transmitter (Tx) and receiver (Rx) photonic integrated circuits (PICs) on InP substrates. The L-band PICs are able to provide post-forward error correction (FEC), error-free operation for dual-polarization (DP) 16-QAM coherent transmission at 33 Gbaud. These transceivers operate at 200 Gbps per channel and support 1.

Widely tunable frequency conversion in monolithic semiconductor waveguides at 2.4 μm.

We report on the generation of continuous-wave widely tunable light between 2360 and 2530 nm using difference-frequency generation with a pump tuned between 938 and 952 nm and a signal tuned between 1490 and 1590 nm in a type-II phase-matched monolithic semiconductor waveguide. The device internal conversion efficiency is estimated to be 0.29%  W(-1)  cm(-2).

Inherent polarization entanglement generated from a monolithic semiconductor chip.

Creating miniature chip scale implementations of optical quantum information protocols is a dream for many in the quantum optics community. This is largely because of the promise of stability and scalability. Here we present a monolithically integratable chip architecture upon which is built a photonic device primitive called a Bragg reflection waveguide (BRW).

Monolithic source of photon pairs.

The creation of monolithically integratable sources of single and entangled photons is a top research priority with formidable challenges: The production, manipulation, and measurement of the photons should all occur in the same material platform, thereby fostering stability and scalability. Here we demonstrate efficient photon pair production in a semiconductor platform, gallium arsenide. Our results show type-I spontaneous parametric down-conversion of laser light from a 2.

Difference-frequency generation in AlGaAs Bragg reflection waveguides.

We demonstrate Type II difference-frequency generation (DFG) around 1550 nm in AlGaAs Bragg reflection waveguides using a pump around 778 nm and a signal within the C-band range. Difference-frequency power of 0.95 nW was obtained using a pump power of 62.

Type-0 second order nonlinear interaction in monolithic waveguides of isotropic semiconductors.

We report the observation of type-0 phase-matching in bulk z-grown Al(x)Ga(1-x)As Bragg reflection waveguides where TM-polarized second-harmonic is generated using TM-polarized pump. For a pulsed pump with 1.8 ps temporal width and an average power of 3.

Continuous-wave sum-frequency generation in AlGaAs Bragg reflection waveguides.

Efficient sum-frequency generation in epitaxial GaAs/AlGaAs waveguides is reported. Phase matching is achieved for type II nonlinear interaction using Bragg reflection waveguides. Continuous-wave signal and pump in 1550 nm wavelength window were used for upconversion of photons to the 775 nm region.

Bandwidth control of paired photons generated in monolithic Bragg reflection waveguides.

Bragg reflection waveguides are considered as monolithic sources of frequency correlated photon pairs generated using spontaneous-parametric down-conversion in a AlxGa1-xAs material system. The source described here offers unprecedented control over the process bandwidth, enabling bandwidth tunability between 1 nm and 450 nm while using the same wafer structure. This tuning is achieved by exploiting the powerful control over the waveguide dispersion properties afforded by the phase-matching technique used.

Continuous-wave second harmonic generation in Bragg reflection waveguides.

We report the observation of continuous-wave second harmonic generation for a pump at 1559.9 nm in type-I phase-matched Bragg reflection waveguide using the GaAs/Al(x)Ga(1)1-(x)As material system. For an internal pump power of 94 mW, phase-matched second harmonic power of 23 nW was measured in a waveguide with a length of 1.