Publications by authors named "Pawel Sliz"
We studied specially designed InAs/GaSb/AlSb/GaSb M-structures, a type-II superlattice (T2SL), that can serve as active materials for short-wavelength infrared (SWIR) applications. To obtain the dispersion relation of the investigated M-structures, k·p perturbation theory based on the eight-band model implemented in the nextnano++ v1.18.
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- The molecular beam epitaxy (MBE) technique is highly effective for growing high-quality crystalline materials like GaAs, but it is very sensitive to changes, making it challenging to maintain optimal growth parameters after servicing.
- Routine servicing of the MBE system can disrupt established growth conditions, necessitating recalibration to achieve the desired layer quality.
- This work focuses on pre-optimizing growth parameters for homoepitaxial GaAs layers post-servicing, analyzing the impact of different reestablishment steps and comparing conditions from two growth campaigns that varied by the presence of an ion pump and temperature adjustments.