In Situ Control of Oxygen Vacancies in TaO Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications.

The plasma-enhanced atomic layer deposition (PEALD) process using Ta(OCH) as a Ta precursor and plasma-activated hydrogen as a reactant for the deposition of TaO films with a controllable concentration of oxygen vacancies (V) is reported herein. The V concentration control was achieved by varying the hydrogen volume fraction of the hydrogen-argon mixture in the plasma, allowing the control of the leakage current density in the tantalum oxide films within the range of 5 orders of magnitude compared with the TaO film grown via thermal ALD using the identical Ta precursor and HO. Temperature-dependent current-voltage measurements combined with Poole-Frenkel emission modeling demonstrated that the bulk trap depth decreases with the increasing hydrogen volume fraction, which could be attributed to the increase of the V concentration.

Ce4(P1-xSi x)3-z: a first example for the stabilization of the anti-Th3P4 type structure by substitution in the non-metal substructure.

A first rare-earth phosphide silicide Ce4(P(1-x)Si(x))(3-z) and its analogues with La, Pr, and Nd were synthesized and characterized. The compounds crystallize in the anti-Th3P4 structure type. The cerium compound shows a mixed occupation of the 12a site with Si and P and possesses a wide homogeneity range with respect to x and z variation.