Extension of the Voronoi Diagram Algorithm to Orthotropic Space for Material Structural Design.

Nowadays, the interaction of additive technologies and methods for designing or optimizing porous structures has yielded good results. Construction with complex microarchitectures can be created using this approach. Varying the microarchitecture leads to changes in weight and mechanical properties.

Method of computational design for additive manufacturing of hip endoprosthesis based on basic-cell concept.

Endoprosthetic hip replacement is the conventional way to treat osteoarthritis or a fracture of a dysfunctional joint. Different manufacturing methods are employed to create reliable patient-specific devices with long-term performance and biocompatibility. Recently, additive manufacturing has become a promising technique for the fabrication of medical devices, because it allows to produce complex samples with various structures of pores.

Numerical and Experimental Study of a Lattice Structure for Orthopedic Applications.

Prosthetic reconstructions provide anatomical reconstruction to replace bones and joints. However, these operations have a high number of short- and long-term complications. One of the main problems in surgery is that the implant remains in the body after the operation.

Structural Design Method for Constructions: Simulation, Manufacturing and Experiment.

The development of additive manufacturing technology leads to new concepts for design implants and prostheses. The necessity of such approaches is fueled by patient-oriented medicine. Such a concept involves a new way of understanding material and includes complex structural geometry, lattice constructions, and metamaterials.

Design and Optimization Lattice Endoprosthesis for Long Bones: Manufacturing and Clinical Experiment.

The article is devoted to the construction of lattice endoprosthesis for a long bone. Clinically, the main idea is to design a construction with the ability to improve bone growth. The article presents the algorithm for such a design.

Probing Interface Defects in Top-Gated MoS Transistors with Impedance Spectroscopy.

The electronic properties of the HfO/MoS interface were investigated using multifrequency capacitance-voltage (C-V) and current-voltage characterization of top-gated MoS metal-oxide-semiconductor field effect transistors (MOSFETs). The analysis was performed on few layer (5-10) MoS MOSFETs fabricated using photolithographic patterning with 13 and 8 nm HfO gate oxide layers formed by atomic layer deposition after in-situ UV-O surface functionalization. The impedance response of the HfO/MoS gate stack indicates the existence of specific defects at the interface, which exhibited either a frequency-dependent distortion similar to conventional Si MOSFETs with unpassivated silicon dangling bonds or a frequency dispersion over the entire voltage range corresponding to depletion of the HfO/MoS surface, consistent with interface traps distributed over a range of energy levels.