Multiple nano-filaments based efficient resistive switching in TiO nanotubes array influenced by thermally induced self-doping and anatase to rutile phase transformation.

In this paper, the impact of thermally induced self-doping and phase transformation in TiO based resistive random-access memory (ReRAM) is discussed. Instead of a thin film, a vertically aligned one-dimensional TiO nanotube array (TNTA) was used as a switching element. Anodic oxidation method was employed to synthesize TNTA, which was thermally treated in the air at 350 °C followed by further annealing from 350 °C to 650 °C in argon.