Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production.

Metal-organic materials such as [NH(CH-CH=CH)][CrNiF(Pivalate)] can act as negative tone resists for electron beam lithography (EBL) with high-resolution patterning of sub-40 nanometer pitch while exhibiting ultrahigh dry etch selectivities >100:1 and giving line dose exposures >11,000 pC/cm. It is clear that the resist sensitivity is too low to be used to manufacture the latest nanoscale photomasks that are suitable for extreme ultraviolet lithography. Therefore, the focus of this work here is to improve the sensitivity of this resist while maintaining its resolution and dry etch selectivity.