Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications.

We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.

Plasmonic gold nanodiscs fabricated into a photonic-crystal nanocavity.

We fabricate and characterise an optical structure consisting of a photonic crystal L3 nanocavity containing two gold nanodisks placed close to a field antinode. We use finite difference time domain (FDTD) modelling to show that the optical properties of the nanocavity are sensitive to the physical separation between the gold nanodisks, and that at reduced separation, the q-factor of a cavity mode polarised parallel to the dimer long-axis is reduced, indicating coupling between the cavity mode and a localised plasmon. Preliminary experimental measurements indeed indicate a damping of the cavity mode in the presence of the dimer; a result consistent with the FDTD modelling.

Realization of the manipulation of ultracold atoms with a reconfigurable nanomagnetic system of domain walls.

Planar magnetic nanowires have been vital to the development of spintronic technology. They provide an unparalleled combination of magnetic reconfigurability, controllability, and scalability, which has helped to realize such applications as racetrack memory and novel logic gates. Microfabricated atom optics benefit from all of these properties, and we present the first demonstration of the amalgamation of spintronic technology with ultracold atoms.

An optical nanocavity incorporating a fluorescent organic dye having a high quality factor.

We have fabricated an L3 optical nanocavity operating at visible wavelengths that is coated with a thin-film of a fluorescent molecular-dye. The cavity was directly fabricated into a pre-etched, free-standing silicon-nitride (SiN) membrane and had a quality factor of Q = 2650. This relatively high Q-factor approaches the theoretical limit that can be expected from an L3 nanocavity using silicon nitride as a dielectric material and is achieved as a result of the solvent-free cavity-fabrication protocol that we have developed.

Nanoscale conjugated-polymer light-emitting diodes.

We use e-beam lithography to pattern an indium tin oxide (ITO) electrode to create arrays of conjugated-polymer LEDs, each of which has a hole-injecting contact limited to 100 nm in diameter. Using optical microscopy, we estimate that the electroluminescence from a 100 nm diameter LED comes from a region characterized by a diameter of approximately 170 nm. This apparent broadening occurs due to current spreading within a PEDOT:PSS layer which was included to aid hole injection.