Model-Based Optimization of Superconducting Qubit Readout.

Measurement is an essential component of quantum algorithms, and for superconducting qubits it is often the most error prone. Here, we demonstrate model-based readout optimization achieving low measurement errors while avoiding detrimental side effects. For simultaneous and midcircuit measurements across 17 qubits, we observe 1.

Optimizing quantum gates towards the scale of logical qubits.

A foundational assumption of quantum error correction theory is that quantum gates can be scaled to large processors without exceeding the error-threshold for fault tolerance. Two major challenges that could become fundamental roadblocks are manufacturing high-performance quantum hardware and engineering a control system that can reach its performance limits. The control challenge of scaling quantum gates from small to large processors without degrading performance often maps to non-convex, high-constraint, and time-dynamic control optimization over an exponentially expanding configuration space.

Time-crystalline eigenstate order on a quantum processor.

Quantum many-body systems display rich phase structure in their low-temperature equilibrium states. However, much of nature is not in thermal equilibrium. Remarkably, it was recently predicted that out-of-equilibrium systems can exhibit novel dynamical phases that may otherwise be forbidden by equilibrium thermodynamics, a paradigmatic example being the discrete time crystal (DTC).

Stabilization of point-defect spin qubits by quantum wells.

Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit.

Quantum supremacy using a programmable superconducting processor.

The promise of quantum computers is that certain computational tasks might be executed exponentially faster on a quantum processor than on a classical processor. A fundamental challenge is to build a high-fidelity processor capable of running quantum algorithms in an exponentially large computational space. Here we report the use of a processor with programmable superconducting qubits to create quantum states on 53 qubits, corresponding to a computational state-space of dimension 2 (about 10).

Erratum: High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC [Phys. Rev. Lett. 117, 220503 (2016)].

This corrects the article DOI: 10.1103/PhysRevLett.117.

High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC.

Dynamic nuclear polarization (DNP) is an attractive method for initializing nuclear spins that are strongly coupled to optically active electron spins because it functions at room temperature and does not require strong magnetic fields. In this Letter, we theoretically demonstrate that DNP, with near-unity polarization efficiency, can be generally realized in weakly coupled electron spin-nuclear spin systems. Furthermore, we theoretically and experimentally show that the nuclear spin polarization can be reversed by magnetic field variations as small as 0.

Quantum decoherence dynamics of divacancy spins in silicon carbide.

Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest Hahn-echo coherence times of an electron spin in a naturally isotopic crystal.

Quantum entanglement at ambient conditions in a macroscopic solid-state spin ensemble.

Entanglement is a key resource for quantum computers, quantum-communication networks, and high-precision sensors. Macroscopic spin ensembles have been historically important in the development of quantum algorithms for these prospective technologies and remain strong candidates for implementing them today. This strength derives from their long-lived quantum coherence, strong signal, and ability to couple collectively to external degrees of freedom.

Optical Polarization of Nuclear Spins in Silicon Carbide.

We demonstrate optically pumped dynamic nuclear polarization of (29)Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99%±1% degree of polarization that we observe at room temperature corresponds to an effective nuclear temperature of 5  μK. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings.

Isolated electron spins in silicon carbide with millisecond coherence times.

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because certain SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing. Here, we show that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled.

Electrically and mechanically tunable electron spins in silicon carbide color centers.

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.

Imaging stacking order in few-layer graphene.

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the material's electronic properties. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetralayer graphene.