Publisher Correction: Elementary steps in electrical doping of organic semiconductors.

The original version of this Article contained an error in Equation 1. A factor of 'c' was included in the right-hand term. This has been corrected in the PDF and HTML versions of the Article.

Elementary steps in electrical doping of organic semiconductors.

Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping is little understood, with its elementary steps controversially discussed and mostly-empirical-materials design. Particularly puzzling is the efficient carrier release, despite a presumably large Coulomb barrier.

Analyzing the n-Doping Mechanism of an Air-Stable Small-Molecule Precursor.

Efficient n-doping of organic semiconductors requires electron-donating molecules with small ionization energies, making such n-dopants usually sensitive to degradation under air exposure. A workaround consists in the usage of air-stable precursor molecules containing the actual n-doping species. Here, we systematically analyze the doping mechanism of the small-molecule precursor o-MeO-DMBI-Cl, which releases a highly reducing o-MeO-DMBI radical upon thermal evaporation.