First realization of the piezoelectronic stress-based transduction device.

We present the first realization of a monolithically integrated piezoelectronic transistor (PET), a new transduction-based computer switch which could potentially operate conventional computer logic at 1/50 the power requirements of current Si-based transistors (Chen 2014 Proc. IEEE ICICDT pp 1-4; Mamaluy et al 2014 Proc. IWCE pp 1-2).

It's time to reinvent the transistor!

A breakthrough in materials could refresh and sustain the information technology revolution.

Gating of a three-leg molecule.

We study the use of a simple three-leg molecule, triphenylene, as a transistor. This configuration allows increased voltage gain to be achieved. We analyze control of the transport between electrodes attached to two of the legs by a gate closely coupled electrostatically to the third leg, using self-consistent density functional calculations.

The biphenyl molecule as a model transistor.

We study transport and charge control in a gated 4,4'-biphenyl diradical molecular transistor using self-consistent density-functional calculations. We track both electron-like and hole-like conduction and relate it to the field dependence of current-carrying pi-derived states. Owing to the coupling between the two benzene rings, the pi-states become segregated into extended, current-carrying states and localized states.

An integrated logic circuit assembled on a single carbon nanotube.

Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs.

Charge control in a model biphenyl molecular transistor.

We study charge control in a gated 4,4'-biphenyl diradical molecular transistor using ab initio density functional theory calculations. I-V curves and intrinsic gate capacitances were derived. We find charge control in this transistor to be strongly affected by polarization of the sigma-states of the molecule, leading to strong electrostatic coupling of the internal potentials to the source and drain electrodes, and relatively weak coupling to the gate.