Hybrid normal metal/ferromagnetic nanojunctions for domain wall tracking.

Hybrid normal metal/ferromagnetic, gold/permalloy (Au/Py), nanojunctions are used to investigate magnetoresistance effects and track magnetization spatial distribution in L-shaped Py nanostructures. Transversal and longitudinal resistances are measured and compared for both straight and 90° corner sections of the Py nanostructure. Our results demonstrate that the absolute change in resistance is larger in the case of longitudinal measurements.

Tunnel junction based memristors as artificial synapses.

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%.

Anisotropic magnetoresistance state space of permalloy nanowires with domain wall pinning geometry.

The domain wall-related change in the anisotropic magnetoresistance in L-shaped permalloy nanowires is measured as a function of the magnitude and orientation of the applied magnetic field. The magnetoresistance curves, compiled into so-called domain wall magnetoresistance state space maps, are used to identify highly reproducible transitions between domain states. Magnetic force microscopy and micromagnetic modelling are correlated with the transport measurements of the devices in order to identify different magnetization states.