Vanadium Dioxide by Atomic Layer Deposition: A Promising Material for Next-Generation Memory Devices.

The synthesis of a vanadium dioxide (VO) film using atomic layer deposition (ALD) with vanadium tetrachloride (VCl) as a precursor for the realization of programmable memory devices is reported. X-ray diffraction analysis revealed the epitaxial growth of VO on c-AlO. The phase transition was monitored using resistivity measurements across varying temperatures, demonstrating a decrease of >4 orders of magnitude at the transition temperature, thereby confirming the high quality of the material.