Publications by authors named "Patrick Fay"

Achieving negative surgical margins, defined as no tumor found on the edges of the resected tissue, during lumpectomy for breast cancer is critical for mitigating the risk of local recurrence. To identify nonpalpable tumors that cannot be felt, pre-operative placements of wire and wire-free localization devices are typically employed. Wire-free localization approaches have significant practical advantages over wired techniques.

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With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO (ref. ), which remains the material of choice to date.

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This work presents the implementation, numerical examples, and experimental convergence study of first- and second-order optimization methods applied to one-dimensional periodic gratings. Through boundary integral equations and shape derivatives, the profile of a grating is optimized such that it maximizes the diffraction efficiency for given diffraction modes for transverse electric polarization. We provide a thorough comparison of three different optimization methods: a first-order method (gradient descent); a second-order approach based on a Newton iteration, where the usual Newton step is replaced by taking the absolute value of the eigenvalues given by the spectral decomposition of the Hessian matrix to deal with non-convexity; and the Broyden-Fletcher-Goldfarb-Shanno (BFGS) algorithm, a quasi-Newton method.

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Substrate-integrated waveguides (SIWs) have recently attracted increasing attention for the development of terahertz (THz) circuits and systems. However, conventional SIWs employ fixed metallic vias to form the waveguide sidewalls, resulting in limited tunability and reconfigurability. In this paper, we report a novel approach for the realization of high-performance tunable and/or reconfigurable THz SIW structures.

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Article Synopsis
  • Carbon is naturally present in the OMVPE process used to grow GaN, impacting its properties.
  • The study investigates how different growth conditions affect carbon incorporation in GaN, finding that consistent ammonia molar flows lead to similar carbon levels regardless of growth efficiency.
  • A new approach using ammonia molar flow relative to growth rate is proposed as a better predictor for carbon incorporation compared to the traditional V/III ratio, achieving a low carbon concentration of 7.3 × 10 atoms/cm.
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This paper explores the performance potential of gratings based on tungsten/hafnia (W/HfO) stacks for thermophotovoltaic thermal emitters via numerical simulations. Structures consisting of a W grating over a HfO spacer layer and a W substrate are analyzed over a range of geometries. For shallow gratings (W grating thickness much smaller than the grating pitch), an emittance of 99.

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Wrap-around gate GaN nanowire MOSFETs using AlO as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10, an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g/SS of 0.

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We report for the first time the synthesis of large, free-standing, MoO(μ-S)(Etdtc) (MoDTC) nanosheets (NSs), which exhibit an electron-beam induced crystalline-to-amorphous phase transition. Both electron beam ionization and femtosecond (fs) optical excitation induce the phase transition, which is size-, morphology-, and composition-preserving. Resulting NSs are the largest, free-standing regularly shaped two-dimensional amorphous nanostructures made to date.

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We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive responses, we obtain the complete charge stability diagram of the device.

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Fluorophore saturation is the key factor limiting the speed and excitation range of fluorescence lifetime imaging microscopy (FLIM). For example, fluorophore saturation causes incorrect lifetime measurements when using conventional frequency-domain FLIM at high excitation powers. In this Letter, we present an analytical theoretical description of this error and present a method for compensating for this error in order to extract correct lifetime measurements in the limit of fluorophore saturation.

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The large electronic polarization in III-V nitrides allows for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-band-gap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging.

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Nanotechnology opens new ways to utilize recent discoveries in biological image processing by translating the underlying functional concepts into the design of CNN (cellular neural/nonlinear network)-based systems incorporating nanoelectronic devices. There is a natural intersection joining studies of retinal processing, spatio-temporal nonlinear dynamics embodied in CNN, and the possibility of miniaturizing the technology through nanotechnology. This intersection serves as the springboard for our multidisciplinary project.

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