Crystal Structure of Colloidally Prepared Metastable AgSe Nanocrystals.

Structural polymorphism is known for many bulk materials; however, on the nanoscale metastable polymorphs tend to form more readily than in the bulk, and with more structural variety. One such metastable polymorph observed for colloidal AgSe nanocrystals has traditionally been referred to as the "tetragonal" phase. While there are reports on the chemistry and properties of this metastable polymorph, its crystal structure, and therefore electronic structure, has yet to be determined.

Investigating the Mechanism of Reversible Lithium Insertion into Anti-NASICON Fe(WO).

The gram-scale preparation of Fe(WO) by a new solution-based route and detailed characterization of the material are presented. The resulting Fe(WO) undergoes a reversible electrochemical reaction against lithium centered around 3.0 V with capacities near 93% of the theoretical maximum.

On the crystal structure of colloidally prepared CsPbBr3 quantum dots.

Colloidally synthesized quantum dots of CsPbBr3 are highly promising for light-emitting applications. Previous reports based on benchtop diffraction conflict as to the crystal structure of CsPbBr3 quantum dots. We present X-ray diffraction and PDF analysis of X-ray total scattering data that indicate that the crystal structure is unequivocally orthorhombic (Pnma).

Thermally-activated recombination in one component of (CH3NH3)PbI3/TiO2 observed by photocurrent spectroscopy.

Photocurrent measurements on devices containing perovskite (CH3NH3)PbI3 show two distinct spectral responses when deposited in a mesoporous oxide matrix, compared with one response for planar perovskite alone. With a TiO2 matrix, the shorter wavelength response has an inverted temperature response with increasing performance on cooling.

Effects of pulsing and interfacial potentials on tellurium-organic heterostructured films.

Polycrystalline thin films of tellurium and organic semiconductor molecules are paired in heterostructured field-effect transistors built on Si/SiO2 substrates. While charge carrier mobilities can exceed 1 cm(2)/(V s), there is only a limited gate voltage range over which the current is modulated. We employ continuous and pulsed measurements on transistors to explore the influence of charge equilibration time on device behavior, finding that pulsed gating improves output characteristics.