Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems.

Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based light emitting diode (LED) structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N single and multi-quantum well systems. To disentangle hole transport from electron transport and carrier recombination processes, we focus our attention on uni-polar (--) systems.

Comparison of Finite Difference and Finite Volume Simulations for a Sc-Drying Mass Transport Model.

Different numerical solutions of a previously developed mass transport model for supercritical drying of aerogel particles in a packed bed [Part 1: Selmer et al. 2018, Part 2: Selmer et al. 2019] are compared.