Publications by authors named "Patrice Gergaud"

Article Synopsis
  • This work presents dark-field X-ray microscopy (DFXM) as a powerful 3D imaging technique for analyzing novel gallium nitride (GaN) structures on nano-pillars designed for optoelectronic devices.
  • The GaN layers are expected to bond cohesively into a well-oriented film due to the softening of the SiO layer during growth, with DFXM achieving extremely precise orientation (standard deviation of 0.04°) for GaN nanostructures.
  • The findings from both nanoscale DFXM and macro-scale X-ray diffraction confirm that the coalescing GaN layers cause intentional misorientation in the silicon nano-pillars, highlighting the technique's potential for developing high-quality GaN
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Electrical aging in lead zirconate titanate (PbZrTiO) thin films has been intensively studied from a macroscopic perspective. However, structural origins and consequences of such degradation are less documented. In this study, we have used synchrotron radiation to evaluate the behavior of ferroelectric domains by X-ray diffraction (XRD).

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Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out.

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The relevance of micro Laue diffraction tomography (µ-LT) to investigate heterogeneous polycrystalline materials has been studied. For this purpose, a multiphase solid oxide fuel cell (SOFC) electrode composite made of yttria-stabilized zirconia and nickel oxide phases, with grains of about a few micrometres in size, has been analyzed. In order to calibrate the Laue data and to test the technique's sensitivity limits, a monocrystalline germanium sample of about 8 × 4 µm in cross-section size has also been studied through µ-LT.

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CdTe is an important compound semiconductor for solar cells, and its use in nanowire-based heterostructures may become a critical requirement, owing to the potential scarcity of tellurium. The effects of the CdCl2 heat treatment are investigated on the physical properties of vertically aligned ZnO/CdTe core-shell nanowire arrays grown by combining chemical bath deposition with close space sublimation. It is found that recrystallization phenomena are induced by the CdCl2 heat treatment in the CdTe shell composed of nanograins: its crystallinity is improved while grain growth and texture randomization occur.

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Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not compatible with standard CMOS (complementary metal oxide semiconductor) fabrication processes. Nanowire synthesis with those metals that are CMOS compatible, such as aluminium and copper, necessitate temperatures higher than 450 degrees C, which is the maximum temperature allowed in CMOS processing.

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To fabricate and qualify nanodevices, characterization tools must be developed to provide a large panel of information over spatial scales spanning from the millimeter down to the nanometer. Synchrotron x-ray-based tomography techniques are getting increasing interest since they can provide fully three-dimensional (3D) images of morphology, elemental distribution, and crystallinity of a sample. Here we show that by combining suitable scanning schemes together with high brilliance x-ray nanobeams, such multispectral 3D volumes can be obtained during a single analysis in a very efficient and nondestructive way.

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