Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity.

MnSinanowires are believed to be the building blocks of the newest trends of flexible and stretchable devices in nanoelectronics. In this context , growing MnSinanowires, as well as characterizing their electronic transport properties provide insight into their phenomenology. In this work, we report on the growth mechanism of MnSinanowires produced by the metallic flux nanonucleation method, as well as the resistivity measurements of these nanostructures.

Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications.

Recently, core-shell nanowires have been proposed as potential electrical connectors for nanoelectronics components. A promising candidate is MnSi nanowires encapsulated in an oxide shell, due to their low reactivity and large flexibility. In this work, we investigate the use of the one-step metallic flux nanonucleation method to easily grow manganese silicide single crystal oxide-protected nanowires by performing their structural and electrical characterization.