New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET.

We report a novel approach for engineering tensely strained Si layers on a relaxed silicon germanium on insulator (SGOI) film using a combination of condensation, annealing, and epitaxy in conditions specifically chosen from elastic simulations. The study shows the remarkable role of the SiO buried oxide layer (BOX) on the elastic behavior of the system. We show that tensely strained Si can be engineered by using alternatively rigidity (at low temperature) and viscoelasticity (at high temperature) of the SiO substrate.