Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique.

Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties. Here, we present a protocol for scalable fabrication of III-V semiconductor nanopillars using a simple and cost-effective top-down approach, combining self-assembled random mask and plasma etching techniques. We describe the deposition of Au/SiO layers to prepare random etch mask.

Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution.

With a band gap close to the Shockley-Quiesser limit and excellent conduction band alignment with the water reduction potential, InP is an ideal photocathode material for photoelectrochemical (PEC) water reduction. Here, we develop facile self-assembled Au nanodots based on dewetting phenomena as a masking technique to fabricate wafer-scale InP nanowires (NWs) via a top-down approach. In addition, we report dual-function wet treatment using sulfur-dissolved oleylamine (S-OA) to remove a plasma-damaged surface in a controlled manner and stabilize InP NWs against surface corrosion in harsh electrolyte solutions.

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting.

While photoelectrochemical (PEC) water splitting is a very promising route toward zero-carbon energy, conversion efficiency remains limited. Semiconductors with narrower band gaps can absorb a much greater portion of the solar spectrum, thereby increasing efficiency. However, narrow band gap (∼1 eV) III-V semiconductor photoelectrodes have not yet been thoroughly investigated.

Ultrathin TaO electron-selective contacts for high efficiency InP solar cells.

Heterojunction solar cells with transition-metal-oxide-based carrier-selective contacts have been gaining considerable research interest owing to their amenability to low-cost fabrication methods and elimination of parasitic absorption and complex semiconductor doping process. In this work, we propose tantalum oxide (Ta2O5) as a novel electron-selective contact layer for photo-generated carrier separation in InP solar cells. We confirm the electron-selective properties of Ta2O5 by investigating band energetics at the InP-Ta2O5 interface using X-ray photoelectron spectroscopy.

Perovskite Photovoltaic Integrated CdS/TiO Photoanode for Unbiased Photoelectrochemical Hydrogen Generation.

Photoelectrolysis of water using solar energy into storable and environment-friendly chemical fuel in the form of hydrogen provides a potential solution to address the environmental concerns and fulfill future energy requirements in a sustainable manner. Achieving efficient and spontaneous hydrogen evolution in water using solar light as the only energy input is a highly desirable but a difficult target. In this work, we report perovskite solar cell integrated CdS-based photoanode for unbiased photoelectrochemical hydrogen evolution.

Photoelectrochemical studies of InGaN/GaN MQW photoanodes.

The research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability.

Improved photoelectrochemical performance of GaN nanopillar photoanodes.

In this work, we report on the photoelectrochemical (PEC) investigation of n-GaN nanopillar (NP) photoanodes fabricated using metal organic chemical vapour deposition and the top-down approach. Substantial improvement in photocurrents is observed for GaN NP photoanodes compared to their planar counterparts. The role of carrier concentration and NP dimensions on the PEC performance of NP photoanodes is further elucidated.