Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.

An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si.

Enhancement of carrier transport characteristic in the SbSeTe topological insulators by N adsorption.

The carrier transport characteristics of SbSeTe topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the SbSeTe crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same.

Enhanced Ferromagnetic Interaction in Modulation-Doped GaMnN Nanorods.

In this report, ferromagnetic interactions in modulation-doped GaMnN nanorods grown on Si (111) substrate by plasma-assisted molecular beam epitaxy are investigated with the prospect of achieving a room temperature ferromagnetic semiconductor. Our results indicate the thickness of GaN layer in each GaN/MnN pair, as well as Mn-doping levels, are essential for suppressing secondary phases as well as enhancing the magnetic moment. For these optimized samples, structural analysis by high-resolution X-ray diffractometry and Raman spectroscopy verifies single-crystalline modulation-doped GaMnN nanorods with Ga sites substituted by Mn atoms.