Plasmonic metagrating-interlayer semiconductor (PMIS) structure for enhancing photodetection via hot-electron injection.

Internal photoemission or hot-electron injection (HEJ) occurring at the metal-semiconductor (MS) Schottky interface has shown great promise in sub-bandgap photodetection and photovoltaics. In this paper, we put forward a plasmonic metagrating-interlayer-semiconductor (PMIS) structure that can significantly enhance the photon-to-electron conversion efficiency of HEJ-based optoelectronic devices. Thanks to the effect of image force-induced barrier lowering, a metal-interlayer-semiconductor (MIS) heterojunction with an ultrathin 2D material interlayer can considerably facilitate the hot electron transport across the Schottky barrier, resulting in a high internal quantum efficiency (IQE).