Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti C T MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding.
View Article and Find Full Text PDFThe electronic and magnetic properties of (LaCrO) /SrCrO superlattices are investigated using first principles calculations. We show that the magnetic moments in the two CrO layers sandwiching the SrO layer compensate each other for even but give rise to a finite magnetization for odd , which is explained by charge ordering with Cr and Cr ions arranged in a checkerboard pattern. The Cr ions induce in-gap hole states at the interface, implying that the transparent superlattices are p-type semiconductors.
View Article and Find Full Text PDFThe influence of epitaxial strain on the electronic, magnetic, and optical properties of the distorted double perovskite Ca FeOsO is studied. These calculations show that the compound realizes a monoclinic structure with P2 /n space group from -6% to +6% strain. While it retains ferrimagnetic ordering with a net magnetic moment of 2 μ per formula unit at low strain, it undergoes transitions into E-antiferromagnetic and C-antiferromagnetic phases at -5% and +5% strain, respectively.
View Article and Find Full Text PDFWe discover that large uniaxial magnetocrystalline anisotropy driven by the simultaneous presence of spin-orbit coupling and structural distortions is the origin of the giant coercivity observed experimentally in the double perovskite LuNiIrO. The magnetic easy axis turns out to be the monoclinic -axis with an anisotropy constant as high as 1.9 × 10 erg/cm.
View Article and Find Full Text PDF