A High-Performance MoS-Based Visible-Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles.

Recent advancements in two-dimensional materials have shown huge potential for optoelectronic applications. It is challenging to achieve highly effective and sensitive broadband photodetection based on MoS devices. Defect engineering, such as introducing vacancies, can narrow the bandgap and boost the separation of photogenerated carriers by defect states but leads to a slow response speed.