Publications by authors named "Panithan Sriboriboon"
Article Synopsis
- - Aluminum scandium nitride (AlScN) shows great potential for future ferroelectric memories due to its high remanent charge density, but it requires thinner films to reduce the high coercive field for lower operating voltages.
- - Thinner films encounter issues with significant leakage currents, which complicate their compatibility with existing CMOS fabrication methods.
- - This study introduces a HfN bottom electrode that minimizes lattice mismatch and reduces leakage currents, allowing for a CMOS-compatible HfN/ASN/TiN structure that showcases ferroelectric properties even at thicknesses of 3 nm and decreases the coercive voltage to 4.35 V.
To address the demands of emerging data-centric computing applications, ferroelectric field-effect transistors (Fe-FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic-memory functionalities. Herein, the fabrication and application of an Fe-FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP S /α-In Se ), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α-In Se , the fabricated Fe-FET exhibits a large memory window of 14.
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