Evaporation Process in Porous Silicon: Cavitation vs Pore Blocking.

We measured sorption isotherms for helium and nitrogen in wide temperature ranges and for a series of porous silicon samples, both native samples and samples with reduced pore mouth, so that the pores have an ink-bottle shape. Combining volumetric measurements and sensitive optical techniques, we show that, at a high temperature, homogeneous cavitation is the relevant evaporation mechanism for all samples. At a low temperature, the evaporation is controlled by meniscus recession, the detailed mechanism being dependent on the pore length and mouth reduction.

Condensation of helium in aerogel and athermal dynamics of the random-field Ising model.

High resolution measurements reveal that condensation isotherms of (4)He in high porosity silica aerogel become discontinuous below a critical temperature. We show that this behavior does not correspond to an equilibrium phase transition modified by the disorder induced by the aerogel structure, but to the disorder-driven critical point predicted for the athermal out-of-equilibrium dynamics of the random-field Ising model. Our results evidence the key role of nonequilibrium effects in the phase transitions of disordered systems.

Multifunctional devices and logic gates with undoped silicon nanowires.

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned.

Joule-assisted silicidation for short-channel silicon nanowire devices.

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-silicide devices with controlled silicon channel length down to 8 nm.