During deposition, modification, and etching of thin films and nanomaterials in reactive plasmas, many active species can interact with the sample simultaneously. This includes reactive neutrals formed by fragmentation of the feed gas, positive ions, and electrons generated by electron-impact ionization of the feed gas and fragments, excited states (in particular, long-lived metastable species), and photons produced by spontaneous de-excitation of excited atoms and molecules. Notably, some of these species can be transiently present during the different phases of plasma processing, such as etching of thin layer deposition.
View Article and Find Full Text PDFEngineering of defects located in grains or at grain boundaries is central to the development of functional materials. Although there is a surge of interest in the formation, migration and annihilation of defects during ion and plasma irradiation of bulk materials, these processes are rarely assessed in low-dimensional materials and remain mostly unexplored spectroscopically at the micrometre scale due to experimental limitations. Here, we use a hyperspectral Raman imaging scheme providing high selectivity and diffraction-limited spatial resolution to examine plasma-induced damage in a polycrystalline graphene film.
View Article and Find Full Text PDFRaman spectroscopy provides rich optical signals that can be used, after data analysis, to assess if a graphene layer is pristine, doped, damaged, functionalized, or stressed. The area being probed by a conventional Raman spectrometer is, however, limited to the size of the laser beam (∼1 µm); hence, detailed mapping of inhomogeneities in a graphene sample requires slow and sequential acquisition of a Raman spectrum at each pixel. Studies of physical and chemical processes on polycrystalline and heterogeneous graphene films require more advanced hyperspectral Raman capable of fast imaging at a high spatial resolution over hundreds of microns.
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