We have studied homogeneous cavitation in liquid nitrogen and normal liquid helium. We monitor the fluid content in a large number of independent mesopores with an ink-bottle shape, either when the fluid in the pores is quenched to a constant pressure or submitted to a pressure decreasing at a controlled rate. For both fluids, we show that, close enough to their critical point, the cavitation pressure threshold is in good agreement with the Classical Nucleation Theory (CNT).
View Article and Find Full Text PDFWe measured sorption isotherms for helium and nitrogen in wide temperature ranges and for a series of porous silicon samples, both native samples and samples with reduced pore mouth, so that the pores have an ink-bottle shape. Combining volumetric measurements and sensitive optical techniques, we show that, at a high temperature, homogeneous cavitation is the relevant evaporation mechanism for all samples. At a low temperature, the evaporation is controlled by meniscus recession, the detailed mechanism being dependent on the pore length and mouth reduction.
View Article and Find Full Text PDFWe report on the evaporation of hexane from porous alumina and silicon membranes. These membranes contain billions of independent nanopores tailored to an ink-bottle shape, where a cavity several tens of nanometers in diameter is separated from the bulk vapor by a constriction. For alumina membranes with narrow enough constrictions, we demonstrate that cavity evaporation proceeds by cavitation.
View Article and Find Full Text PDFHigh resolution measurements reveal that condensation isotherms of (4)He in high porosity silica aerogel become discontinuous below a critical temperature. We show that this behavior does not correspond to an equilibrium phase transition modified by the disorder induced by the aerogel structure, but to the disorder-driven critical point predicted for the athermal out-of-equilibrium dynamics of the random-field Ising model. Our results evidence the key role of nonequilibrium effects in the phase transitions of disordered systems.
View Article and Find Full Text PDFWe report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned.
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