Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SiN.

Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be adjusted from 0.

WALANT technique versus locoregional anesthesia in the surgical management of metacarpal and phalangeal fractures: Lessons from the Covid-19 crisis.

Wide Awake Local Anesthesia No Tourniquet (WALANT) is an anesthetic method which uses a local injection of anesthetic and epinephrine, avoiding use of a tourniquet. During the COVID-19 pandemic, human and logistic resources had to be reorganized, and WALANT ensured resilience in our department to maintain access to surgical care. The objective of the present study was to compare hand function recovery 3 months after surgery for unstable metacarpal or phalangeal fracture under regional anesthesia versus WALANT.

Exploration of irradiation intensity dependent external in-band quantum yield for ZnO and CuO/ZnO photocatalysts.

Decorating metal oxides with wide band-gap semiconductor nano-particles constitute an important approach for synthesizing nano-photocatalysts, where the photocatalytic activity is attributed to the band diagram related effective charge separation and external in-band quantum yield (EIQY). However, up to now, the correlation between the irradiation intensity and the functionalization of the in-band quantum yield has not yet been explained. In this work, by investigating the photocatalytic activity of ZnO and CuO/ZnO (CZO) nano-photocatalysts under various irradiative intensities, we show that the effective charge separation in the CuO/ZnO band alignment is sensitive to weak illumination, while ZnO exhibits a competitive photocatalytic activity with CZO under strong illumination.

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary.

In semiconductor heterojunction, polarity critically governs the physical properties, with an impact on electronic or optoelectronic devices through the presence of pyroelectric and piezoelectric fields at the active heteropolar interface. In the present work, the abrupt O-polar ZnO/Ga-polar GaN heterointerface was successfully achieved by using high O/Zn ratio flux during the ZnO nucleation growth. Atomic-resolution high-angle annular dark-field and bright-field transmission electron microscopy observation revealed that this polarity inversion confines within one monolayer by forming the (0001) plane inversion domain boundary (IDB) at the ZnO/GaN heterointerface.

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells.

In this work, we analyse the microstructure and local chemical composition of green-emitting In Ga N/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.