3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer by wafer bonding, or die-to-die packaging. Here we present low-temperature integration of InAs on W using SiN template assisted selective area metal-organic vapor-phase epitaxy (MOVPE).
View Article and Find Full Text PDFIn current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a lateral nanowire network 1-to-4 demultiplexer design fabricated by selective area grown InGaAs on InP, suitable for on chip routing of DC current for qubit biasing.
View Article and Find Full Text PDFBackground: Atherosclerotic lesions are comprised of distinct regions with different proteomic profiles. Men and women develop differences in lesion phenotype, with lesions from women generally being more stable and less prone to rupture. We aimed to investigate the differences in proteomic profiles between sexes, including distinct lesion regions, to identify altered proteins that contribute to these differences observed clinically.
View Article and Find Full Text PDFChronic widespread pain (CWP) is a complex pain condition that is difficult to treat. The prevalence of CWP approximates ~10% of the general population, with higher prevalence in women. Lack of understanding of molecular mechanisms has been a challenge for diagnosis and treatment of chronic pain.
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